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TS805C04R-TE24R PDF预览

TS805C04R-TE24R

更新时间: 2024-09-20 08:35:51
品牌 Logo 应用领域
富士电机 - FUJI 整流二极管肖特基二极管光电二极管
页数 文件大小 规格书
6页 481K
描述
Schottky Barrier Diode

TS805C04R-TE24R 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

TS805C04R-TE24R 数据手册

 浏览型号TS805C04R-TE24R的Datasheet PDF文件第2页浏览型号TS805C04R-TE24R的Datasheet PDF文件第3页浏览型号TS805C04R-TE24R的Datasheet PDF文件第4页浏览型号TS805C04R-TE24R的Datasheet PDF文件第5页浏览型号TS805C04R-TE24R的Datasheet PDF文件第6页 
http://www.fujisemi.com  
FUJI Diode  
TS805C04R-TE24R  
Schottky Barrier Diode  
Maximum Rating and Characteristics  
Maximum ratings (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Ratings  
Units  
Repetitive peak reverse voltage  
VRRM  
-
40  
V
50Hz Square wave duty =1/2  
Tc = 110˚C  
Average output current  
Io  
20*  
A
Non-repetitive forward surge current**  
Operating junction temperature  
Storage temperature  
I
FSM  
Sine wave, 10ms 1shot  
120  
150  
A
Tj  
-
-
˚C  
˚C  
Tstg  
-40 to +150  
Note* Out put current of center tap full wave connection.  
Note** Rating per element  
Electrical characteristics (at Ta=25˚C unless otherwise specified.)  
Item  
Symbols  
Conditions  
Maximum  
Units  
V
Forward voltage***  
Reverse current***  
Thermal resistance  
Note*** Rating per element  
V
F
I
F
= 10 A  
0.6  
15  
2
I
R
V
R
=VRRM  
mA  
Rth(j-c)  
Junction to case  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Maximum  
Units  
Approximate mass  
-
1.6  
g
1

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