Datasheet > TS808C06R-TE24R

TS808C06R-TE24R

更新时间： 2024-09-20 08:35:51

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
6页	484K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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TS808C06R-TE24R 数据手册

http://www.fujisemi.com

FUJI Diode

TS808C06R-TE24R

Schottky Barrier Diode

Maximum Rating and Characteristics

Maximum ratings (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

Ratings

Units

Repetitive peak reverse voltage

VRRM

50Hz Square wave duty =1/2

Tc = 115˚C

Average output current

30*

Non-repetitive forward surge current**

Operating junction temperature

Storage temperature

FSM

Sine wave, 10ms 1shot

120

150

˚C

Tstg

-40 to +150

Note* Out put current of center tap full wave connection.

Note** Rating per element

Electrical characteristics (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

= 12.5 A

Maximum

0.58

Units

Forward voltage***

Reverse current***

Thermal resistance

Note*** Rating per element

=VRRM

Rth(j-c)

Junction to case

1.2

˚C/W

Mechanical characteristics

Item

Conditions

Maximum

Units

Approximate mass

1.6

12 3 4 5 6

中文翻译

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