Datasheet > TPW65R040MD

TPW65R040MD

更新时间： 2024-04-09 19:00:03

品牌	Logo	应用领域
无锡紫光微 - WUXI UNIGROUP		电子
页数	文件大小	规格书
8页	810K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件，无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

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TPW65R040MD 数据手册

TPW65R040MD

Wuxi Unigroup Microelectronics Co.,Ltd

Absolute Maximum Ratings T_C= 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

T_C= 25ºC

43.2

216

±30

2185

3.31

13.7

Continuous Drain Current

I_D

T_C= 100ºC

Pulsed Drain Current

(note1)

I_D,pulse

V_GSS

E_AS

Gate-Source Voltage

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Avalanche Current

(note2)

E_AR

I_AR

MOSFET dv/dt Ruggedness, V_DS= 0...480V

Power Dissipation For TO-247-4L

dv/dt

P_D

V/ns

500

Continuous Diode Forward Current

Diode Pulsed Current

I_S

216

(note1)

(note3)

I_S,pulse

dv/dt

di_f/dt

Reverse Diode dv/dt

V/ns

A/μs

ºC

Maximum Diode Commutation Speed

Operating Junction and Storage Temperature Range

500

T_J, T_stg

-55~+150

Thermal Resistance For TO-247-4L

Parameter

Symbol

R_thJC

Value

0.25

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

ºC/W

R_thJA

V1.0

www.tsinghuaicwx.com

123 4 5 6 7 8

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