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TPWR8503NL PDF预览

TPWR8503NL

更新时间: 2024-11-03 14:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 488K
描述
N-ch MOSFET, 30 V, 0.00085 Ω@10V, DSOP Advance, U-MOSⅧ-H

TPWR8503NL 数据手册

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TPWR8503NL  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TPWR8503NL  
1. Applications  
High-Efficiency DC-DC Converters  
Switching Voltage Regulators  
2. Features  
(1) High-speed switching  
(2) Small gate charge: QSW = 16 nC (typ.)  
(3) Low drain-source on-resistance: RDS(ON) = 1.0 m(typ.) (VGS = 4.5 V)  
(4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)  
(5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1, 2, 3: Source  
4: Gate  
5, 6, 7, 8: Drain  
DSOP Advance  
Start of commercial production  
2014-09  
©2015-2019  
2019-10-30  
Rev.4.0  
1
Toshiba Electronic Devices & Storage Corporation  

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