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TPW65R120M PDF预览

TPW65R120M

更新时间: 2024-11-18 15:18:31
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP 电子
页数 文件大小 规格书
12页 947K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

TPW65R120M 数据手册

 浏览型号TPW65R120M的Datasheet PDF文件第2页浏览型号TPW65R120M的Datasheet PDF文件第3页浏览型号TPW65R120M的Datasheet PDF文件第4页浏览型号TPW65R120M的Datasheet PDF文件第5页浏览型号TPW65R120M的Datasheet PDF文件第6页浏览型号TPW65R120M的Datasheet PDF文件第7页 
TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M  
Wuxi Unigroup Microelectronics Co.,Ltd  
650V Super-junction Power MOSFET  
Description  
650V Super-junction Power MOSFET  
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ  
principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with  
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler,also fits the  
industrial grade applications,like AC-DC SMPS requirements for PFC, AC/DC power conversion, designed by Wuxi Unigroup  
Microelectronics Company.  
Features  
Applications  
l Very low FOM RDS(on)×Qg  
l 100% avalanche tested  
l Easy to use/drive  
l RoHS compliant  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply (UPS)  
l Power Factor Correction (PFC)  
l Charger  
TO-263  
TO-220  
TO-220FP-NL  
TO-247  
Device Marking and Package Information  
Device  
Package  
TO-263  
Marking  
TPB65R120M  
TPP65R120M  
TPR65R120M  
TPW65R120M  
65R120M  
65R120M  
65R120M  
65R120M  
TO-220  
TO-220FP-NL  
TO-247  
Key Performance Parameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg,typ  
Value  
700  
0.12  
57  
Unit  
V
Ω
nC  
A
ID  
30  
ID,pulse  
90  
A
EOSS @ 400V  
Body Diode diF/dt  
6.54  
500  
μJ  
A/μs  
V1.0  
1
www.tsinghuaicwx.com  

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