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TPW65R190MFD PDF预览

TPW65R190MFD

更新时间: 2024-11-19 15:18:35
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP 电子
页数 文件大小 规格书
12页 774K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

TPW65R190MFD 数据手册

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TPA65R190MFD,TPB65R190MFD,TPP65R190MFD,TPW65R190MFD  
Wuxi Unigroup Microelectronics Co.,Ltd  
650V Super-junction Power MOSFET  
Description  
650V Super-junction Power MOSFET  
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ  
principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely  
low switching, communication and conduction losses device with highest robustness make especially resonant switching  
applications more reliable, more efficient, lighter and cooler, designed by Wuxi Unigroup Microelectronics Company.  
Features  
Applications  
l Ultra-fast body diode  
l Very low FOM RDS(on)×Qg  
l Easy to use/drive  
l 100% avalanche tested  
l RoHS compliant  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply (UPS)  
l Power Factor Correction (PFC)  
l LLC Half-bridge  
l Charger  
TO-220  
TO-220F  
TO-263  
TO-247  
Device Marking and Package Information  
Device  
Package  
TO-220F  
TO-263  
TO-220  
TO-247  
Marking  
TPA65R190MFD  
TPB65R190MFD  
TPP65R190MFD  
TPW65R190MFD  
65R190MFD  
65R190MFD  
65R190MFD  
65R190MFD  
Key Performance Parameters  
Parameter  
Value  
700  
0.19  
42  
Unit  
V
VDS @ Tj,max  
RDS(on),max  
Ω
Qg,typ  
nC  
A
ID  
20  
ID,pulse  
60  
A
EOSS @ 400V  
4.98  
500  
112  
0.54  
9.6  
μJ  
A/μs  
ns  
μC  
A
Body Diode diF/dt  
trr  
Qrr  
Irrm  
V1.0  
1
www.tsinghuaicwx.com  

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