Datasheet > TPWR6003PL

TPWR6003PL

更新时间： 2023-12-20 18:44:34

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	513K
描述
N-ch MOSFET, 30 V, 0.0006 Ω@10V, DSOP Advance, U-MOSⅨ-H

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TPWR6003PL 数据手册

TPWR6003PL

MOSFETs Silicon N-channel MOS (U-MOS-H)

TPWR6003PL

1. Applications

•

High-Efficiency DC-DC Converters

•

Switching Voltage Regulators

2. Features

(1) High-speed switching

(2) Small gate charge: QSW = 30 nC (typ.)

(3) Small output charge: Qoss = 81.3 nC (typ.)

(4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ.) (VGS = 10 V)

(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)

(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

DSOP Advance

Start of commercial production

2016-03

2019-10-21

Rev.4.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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