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TPW80R180M PDF预览

TPW80R180M

更新时间: 2024-09-24 15:19:35
品牌 Logo 应用领域
无锡紫光微 - WUXI UNIGROUP 电子
页数 文件大小 规格书
11页 919K
描述
Multi-EPI超结功率MOSFET(Multi-EPI Super Junction MOSFET)是种新型功率器件,无锡紫光微电子限公司在国内率先推出成熟的Multi-EPI超结功率MOSF

TPW80R180M 数据手册

 浏览型号TPW80R180M的Datasheet PDF文件第2页浏览型号TPW80R180M的Datasheet PDF文件第3页浏览型号TPW80R180M的Datasheet PDF文件第4页浏览型号TPW80R180M的Datasheet PDF文件第5页浏览型号TPW80R180M的Datasheet PDF文件第6页浏览型号TPW80R180M的Datasheet PDF文件第7页 
TPA80R180M,TPB80R180M,TPW80R180M  
Wuxi Unigroup Microelectronics Co.,Ltd  
800V Super-junction Power MOSFET  
Description  
800V Super-junction Power MOSFET  
Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ  
principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with  
highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler, designed by  
Wuxi Unigroup Microelectronics Company.  
Features  
Applications  
l Very low FOM RDS(on)×Qg  
l 100% avalanche tested  
l Easy to use/drive  
l RoHS compliant  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply (UPS)  
l Power Factor Correction (PFC)  
l Low Power Chargers and Adapters  
TO-220F  
TO-247  
TO-263  
Device Marking and Package Information  
Device  
Package  
Marking  
TPA80R180M  
TPB80R180M  
TPW80R180M  
TO-220F  
TO-263  
TO-247  
80R180M  
80R180M  
80R180M  
Key Performance Parameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Qg,typ  
Value  
850  
0.18  
54.9  
23  
Unit  
V
Ω
nC  
A
ID  
ID,pulse  
69  
A
EOSS @ 400V  
Body Diode diF/dt  
4.95  
500  
μJ  
A/μs  
V1.0  
1
www.tsinghuaicwx.com  

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