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TPCP8110 PDF预览

TPCP8110

更新时间: 2024-03-25 22:01:57
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东芝 - TOSHIBA /
页数 文件大小 规格书
9页 256K
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Not Recommended for New Design

TPCP8110 数据手册

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TPCP8110  
6. Electrical Characteristics  
6.1. Static Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
IGSS  
IDSS  
VGS = -16/+10 V, VDS = 0 V  
VDS = -60 V, VGS = 0 V  
±10  
µA  
Drain cut-off current  
-10  
Drain-source breakdown voltage  
Drain-source breakdown voltage (Note 6)  
Gate threshold voltage  
V(BR)DSS ID = -10 mA, VGS = 0 V  
V(BR)DSX ID = -10 mA, VGS = 10 V  
-60  
-50  
-2  
V
Vth  
VDS = -10 V, ID = -1 mA  
VGS = -6 V, ID = -2.5 A  
-2.5  
33.3  
-3  
Drain-source on-resistance  
RDS(ON)  
53.2  
mΩ  
VGS = -10 V, ID = -2.5 A  
30.4  
39.5  
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-  
source breakdown voltage is lowered in this mode.  
6.2. Dynamic Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Input capacitance  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
pF  
Ciss  
Crss  
Coss  
tr  
VDS = -10 V, VGS = 0 V, f = 1 MHz  
2075  
150  
205  
9
Reverse transfer capacitance  
Output capacitance  
Switching time (rise time)  
Switching time (turn-on time)  
Switching time (fall time)  
Switching time (turn-off time)  
See Figure 6.2.1.  
ns  
ton  
26  
tf  
27  
toff  
143  
Fig. 6.2.1 Switching Time Test Circuit  
6.3. Gate Charge Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Qg  
Test Condition  
Min  
Typ.  
45  
Max  
Unit  
nC  
Total gate charge (gate-source plus  
gate-drain)  
VDD -48 V, VGS = -10 V, ID = -5 A  
Gate-source charge 1  
Gate-drain charge  
Gate switch charge  
Qgs1  
Qgd  
6
13  
14  
QSW  
6.4. Source-Drain Characteristics (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Reverse drain current (pulsed)  
Diode forward voltage  
(Note 7)  
IDRP  
-20  
1.2  
A
V
VDSF  
IDR = -5 A, VGS = 0 V  
Note 7: Ensure that the channel temperature does not exceed 175.  
©2016 Toshiba Corporation  
2016-02-23  
Rev.3.0  
3

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