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TP0202K_13 PDF预览

TP0202K_13

更新时间: 2024-10-30 12:03:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 215K
描述
P-Channel 30-V (D-S) MOSFET

TP0202K_13 数据手册

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TP0202K  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
VGS(th) (V) ID (mA) Qg (Typ.)  
Available  
TrenchFET® Power MOSFET  
High-Side Switching  
Low On-Resistance: 1.2 Ω (typ.)  
Low Threshold: - 2 V (typ.)  
Fast Swtiching Speed: 14 ns (typ.)  
Low Input Capacitance: 31 pF (typ.)  
2000 V ESD Protection  
1.4 at VGS = - 10 V - 1.3 to - 3.0  
3.5 at VGS = - 4.5 V - 1.3 to - 3.0  
- 385  
- 240  
- 30  
1000  
TO-236  
(SOT-23)  
APPLICATIONS  
Drivers: Relays, Solenoids, Lamps, Hammers, Display,  
Memories, Transistors, etc.  
Battery Operated Systems  
Power Supply Converter Circuits  
Solid-State Relays  
G
1
2
3
D
Marking Code: 2Kwll  
2K = Part Number Code for TP0202K  
w = Week Code  
ll = Lot Traceability  
S
BENEFITS  
Top View  
Ease in Driving Switches  
Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free)  
TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free)  
Low Offset (Error) Voltage  
Low-Voltage Operation  
High-Speed Circuits  
Easily Driven without Buffer  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 30  
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
TA = 25 °C  
TA = 85 °C  
- 385  
- 280  
- 750  
350  
Continuous Drain Current (TJ = 150 °C)a  
Pulsed Drain Currentb  
ID  
mA  
IDM  
PD  
TA = 25 °C  
TA = 85 °C  
Power Dissipationa  
mW  
185  
Maximum Junction-to-Ambienta  
350  
°C/W  
RthJA  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
Notes:  
a. Surface Mounted on FR4 board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 71609  
S-83053-Rev. E, 29-Dec-08  
www.vishay.com  
1

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