Datasheet > TP0202T-E3

TP0202T-E3

更新时间： 2024-09-15 14:45:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	38K
描述
Transistor

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技术参数
数据手册

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TP0202T-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	配置：	Single
最大漏极电流 (Abs) (ID)：	0.41 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.35 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

TP0202T-E3 数据手册

TP0202T

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_(BR)DSSMin (V)

r_DS(on)Max (W)

V_GS(th)(V)

I_D(A)

1.4 @ V = –10 V

–1.3 to – 3 V

–0.41

–0.27

–20

3.5 @ V = –4.5 V

FEATURES

BENEFITS

APPLICATIONS

D High-Side Switching

D Ease in Driving Switches

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Switching

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Low On-Resistance: 0.9 W

D Low Threshold: –2.1 V

D Battery Operated Systems

D Power Supply, Converter Circuits

D Motor Control

D Fast Switching Speed: 18 ns

D Low Input Capacitance: 55 pF

D Easily Driven Without Buffer

TO-236

(SOT-23)

Marking Code: P3wll

P3 = Part Number Code for TP0202T

w = Week Code

ll = Lot Traceability

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"20

T = 25_C

–0.41

–0.26

–0.75

0.35

Continuous Drain Current (T = 150__C)

T = 70_C

Pulsed Drain Current

T = 25_C

Power Dissipation

T = 70_C

0.22

Thermal Resistance, Junction-to-Ambient

357

_C/W

thJA

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Notes

a. Pulse width limited by maximum junction temperature.

For applications information see AN804.

Document Number: 70208

S-04279—Rev. G, 16-Jul-01

www.vishay.com

11-1

12 3 4 5

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