Datasheet > TP0202T-T1

TP0202T-T1

更新时间： 2024-11-27 23:37:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	53K
描述
TRANSISTOR SOT23 SMD MOSFET

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TP0202T-T1 数据手册

TP0202T

P-Channel Enhancement-Mode MOS Transistor

Product Summary

V_(BR)DSSMin (V)

r_DS(on)Max (W)

V_GS(th)(V)

I_D(A)

1.4 @ V = –10 V

–1.3 to – 3 V

–0.31

–0.16

–20

3.5 @ V = –4.5 V

For applications information see AN804.

Features

Benefits

Applications

D High-Side Switching

D Ease in Driving Switches

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Low On-Resistance: 0.9 W

D Low Threshold: –2.1 V

D Fast Switching Speed: 18 ns

D Low Offset (Error) Voltage

D Low-Voltage Operation

D High-Speed Switching

D Battery Operated Systems

D Power Supply, Converter Circuits

D Motor Control

D Low Input Capacitance: 55 pF D Easily Driven Without Buffer

TO-236

(SOT-23)

Top View

TP0202T (P3)*

*Marking Code for TO-236

Absolute Maximum Ratings (T_A= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

"20

T = 25_C

–0.31

–0.25

–0.75

0.2

Continuous Drain Current (T = 150_C)

T = 70_C

Pulsed Drain Current

T = 25_C

Power Dissipation

T = 70_C

0.128

625

Maximum Junction-to-Ambient

thJA

_C/W

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Notes

a. Pulse width limited by maximum junction temperature.

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #2812.

Applications information may also be obtained via FaxBack, request document #9804.

Siliconix

S-44505—Rev. E, 06-Sep-94

12 3 4

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