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TN2425N8-G

更新时间: 2024-09-19 00:04:31
品牌 Logo 应用领域
超科 - SUPERTEX 晶体晶体管开关脉冲
页数 文件大小 规格书
1页 271K
描述

TN2425N8-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.93其他特性:LOGIC LEVEL COMPATIBLE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):0.48 A
最大漏源导通电阻:3.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-243AAJESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):1.9 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TN2425N8-G 数据手册

  
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SUPERTEX Enhancement & Depletion Mode MOSFETs  
This page of product is compliant.  
TO-92  
TO-220  
TO-252  
SOIC-8  
SOIC-8 (Narrow)  
SOT-23-3  
SOT-89-3  
Surface Mount Device  
SUPERTEX N-CHANNEL ENHANCEMENT-MODE MOSFETS (CONT.)  
Low Threshold  
For quantities 2000 and up, call for quote.  
Drain-to-Source  
ON-State  
Resistance  
ON-State  
Drain  
Current  
Turn-ON/ Turn-OFF  
Drain-to-Source  
Breakdown  
Voltage  
Gate  
Threshold  
Voltage  
Input  
Capacitance  
Power  
Dissipation  
Delay  
Time  
Price Each  
Supertex  
Part No.  
Package  
Type  
MOUSER  
STOCK NO.  
I
C
t
t
(OFF)  
BV  
R
V
@ TA=25°C  
(W)  
D(ON)  
ISS  
(ON)  
DSS  
DS(ON)  
GS(th)  
Min. (V)  
Min. (V)  
Max. (Ω)  
Min. (A)  
(pF)  
Max. (ns) Max. (ns)  
Max. (V)  
1
100  
500 1000  
689-VN2410L-G  
689-TN2124K1-G TN2124K1-G SOT-23-3  
VN2410L-G  
TO-92  
240  
240  
240  
250  
250  
250  
300  
350  
350  
350  
350  
400  
400  
400  
400  
400  
500  
500  
500  
600  
600  
0.8  
0.8  
1
0.6  
0.6  
0.8  
0.8  
0.6  
1
0.6  
0.8  
0.6  
0.8  
0.8  
0.6  
0.6  
1.5  
1.5  
2
2
2
3
2
2
2.4  
2.4  
1.8  
2
10  
15  
1.25  
7
1
0.14  
5
1.2  
1.2  
0.8  
0.25  
0.15  
1
0.75  
1
0.15  
2
2
1
1
0.5  
0.5  
0.15  
0.25  
0.25  
125  
38  
300  
70  
110  
105  
35  
110  
125  
65  
200  
110  
180  
180  
95  
8
7
23  
10  
90  
25  
25  
35  
12  
65  
25  
25  
40  
65  
25  
25  
25  
25  
25  
25  
10  
25  
25  
1
0.36  
1
0.74  
0.74  
1.6  
0.36  
1
1.6  
0.36  
1.6  
1
1.3  
1
1
1.6  
1
1.6  
1
1
.63  
.46  
2.07  
.40  
.36  
.86  
.46  
.97  
.86  
.53  
.52  
.38  
1.72  
.33  
.30  
.71  
.38  
.81  
.71  
.44  
.74  
.88  
1.07  
.85  
.70  
.74  
.81  
.85  
.82  
.68  
.68  
.48  
.35  
1.59 1.53  
.46  
.34  
689-VN2224N3-G VN2224N3-G  
689-TN5325N3-G TN5325N3-G  
689-TN5325K1-G TN5325K1-G SOT-23-3  
689-TN2425N8-G TN2425N8-G SOT-89-3  
689-TN2130K1-G TN2130K1-G SOT-23-3  
TO-92  
TO-92  
15  
20  
20  
15  
10  
20  
20  
20  
20  
20  
15  
15  
20  
20  
10  
10  
10  
10  
10  
.31  
.28  
.66  
.35  
.74  
.66  
.41  
.69  
.82  
.99  
.79  
.64  
.69  
.74  
.79  
.76  
.63  
.63  
.29  
.27  
.63  
.34  
.71  
.63  
.39  
.66  
.78  
.95  
.76  
.62  
.66  
.71  
.76  
.73  
.60  
.60  
7
3.5  
25  
15  
10  
15  
6
12  
5
5
12  
12  
13  
13  
60  
20  
20  
689-VN3515L-G  
VN3515L-G  
TO-92  
689-TN2535N8-G TN2535N8-G SOT-89-3  
689-TN5335K1-G TN5335K1-G SOT-23-3  
689-TN2435N8-G TN2435N8-G SOT-89-3  
689-VN4012L-G  
689-TN2640LG-G TN2640LG-G SOIC-8 (N)  
689-TN2640N3-G TN2640N3-G  
689-TN2540N3-G TN2540N3-G  
689-TN2540N8-G TN2540N8-G SOT-89-3  
689-VN2450N3-G VN2450N3-G  
689-VN2450N8-G VN2450N8-G SOT-89-3  
2
2.4  
1.8  
2
2
2
2
4
4
4
.89  
VN4012L-G  
TO-92  
1.06  
1.29  
1.03  
.84  
.89  
.97  
1.03  
.99  
.82  
TO-92  
TO-92  
95  
TO-92  
150  
150  
45  
150  
150  
689-VN0550N3-G VN0550N3-G  
689-VN2460N3-G VN2460N3-G  
689-VN2460N8-G VN2460N8-G SOT-89-3  
TO-92  
TO-92  
1.5  
1.5  
4
4
1.6  
.82  
SUPERTEX N & P-CHANNEL ENHANCEMENT-MODE MOSFETS  
For quantities 2000 and up, call for quote.  
689-TC2320TG-G TC2320TG-G  
689-TC6320TG-G TC6320TG-G  
SOIC-8  
SOIC-8  
200/-200  
200/-200  
0.6/-1.0 2.0/-2.4  
1.0/-1.0 2.0/-2.4  
7/12  
7/8  
1.0/-0.2  
1.0/-1.0  
110/125  
110/200  
20/10  
10/10  
25/20  
20/20  
- - - - -  
- - - - -  
1.77  
1.86  
1.47  
1.55  
1.36 1.30  
1.43 1.37  
SUPERTEX DEPLETION MODE N-CHANNEL MOSFETS  
Advanced Vertical DMOS Technology N-Channel Depletion Mode Vertical DMOS FETs  
These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of  
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structure, these devices are free from thermal runaway and thermally-induced secondary  
breakdown.  
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.  
Features:  
Applications:  
High input impedance  
Low input capacitance  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Normally-on switches  
Solid state relays  
Constant current sources  
Power supply circuits  
Telecom  
Fast switching speeds  
Converters  
For quantities 2000 and up, call for quote.  
Price Each  
Drain-to-Source Drain-to-Source  
Reverse  
Recovery  
Time  
Drain-to-Source  
Current  
Gate-to-Source  
OFF Voltage  
Power  
Dissipation  
Breakdown  
Voltage  
ON-State  
Resistance  
MOUSER  
STOCK NO.  
Package  
Type  
Supertex  
Part No.  
BV  
R
I
V
T
rr  
@TA=25°C  
(W)  
DSX  
DS(ON)  
DSS  
GS(OFF)  
Min. (mA)  
Min. (V)  
Max. (Ω)  
Min. (V)  
Max. (V) TYP (ns)  
1
100  
500  
1000  
689-DN3525N8-G  
689-DN3535N8-G  
689-DN2540N5-G  
689-DN3145N8-G  
689-DN3545N3-G  
689-DN3545N8-G  
DN3525N8-G  
DN3535N8-G  
DN2540N5-G  
DN3145N8-G  
DN3545N3-G  
DN3545N8-G  
SOT-89-3  
SOT-89-3  
TO-220  
SOT-89-3  
TO-92  
250  
350  
400  
450  
450  
450  
6
300  
200  
150  
120  
200  
200  
-1.5  
-1.5  
-1.5  
-1.5  
-1.5  
-1.5  
-3.5  
-3.5  
-3.5  
-3.5  
-3.5  
-3.5  
800  
800  
800  
800  
800  
800  
1.6  
1.6  
15  
1.3  
.74  
1.6  
.80  
.82  
1.60  
.82  
.82  
.89  
.66  
.68  
1.33  
.68  
.68  
.74  
.61  
.63  
1.23  
.63  
.63  
.69  
.59  
.60  
1.18  
.60  
.60  
.66  
10  
25  
60  
20  
20  
SOT-89-3  
Advanced Lateral DMOS Technology N-Channel Depletion Mode MOSFETs  
The LND1 and LND2 are high voltage N-channel depletion-mode (normally-on)  
transistors utilizing Supertex’s lateral DMOS technology. The gate is ESD protected.  
The LND1 and LND2 are ideal for high voltage applications in the areas of normally-on  
switches, precision constant current sources, voltage ramp generation and  
amplification.  
Applications:  
Features:  
Normally-on switches  
Solid state relays  
Converters  
Constant current sources  
Power supply circuits  
Input protection circuits  
High input impedance and low CISS  
Low power drive requirement  
ESD gate protection  
Free from secondary breakdown  
Excellent thermal stability  
Integral source-drain diode  
Ease of paralleling  
For quantities 2000 and up, call for quote.  
689-LND150N3-G  
689-LND150N8-G  
689-LND250K1-G  
LND150N3-G  
LND150N8-G  
LND250K1-G  
TO-92  
SOT-89-3  
SOT-23-3  
500  
500  
500  
1000  
1000  
1000  
1
1
1
-1  
-1  
-1  
-3  
-3  
-3  
200  
200  
200  
.74  
1.6  
.36  
.55  
.72  
.46  
.46  
.60  
.38  
.42  
.55  
.35  
.41  
.53  
.34  
SUPERTEX N-CHANNEL IGBT (INSULATED GATE BIPOLAR TRANSISTOR) MOSFET  
For quantities 2000 and up, call for quote.  
Price Each  
Collector  
Power  
Emitter  
Breakdown  
Voltage  
Collector  
Current  
Rise/Fall  
Times  
Gate Threshold  
Voltage  
Supertex  
Part No.  
Dissipation  
@25°C  
Delay Time  
MOUSER  
STOCK NO.  
Package  
Type  
Min. (V)  
700  
Max. (A)  
1
Min. (V) Max. (V) Min. (V) Max. (V)  
1.5 3.5 15 50  
Max. (ns)  
1
100  
.70  
500  
.64  
1000  
.62  
Max. (W)  
2.5  
689-GN2470K4-G  
GN2470K4-G  
TO-252  
600/12000  
.84  
© Copyright 2007 Mouser Electronics  
© Copyright 2007 Mouser Electronics  
www.mouser.com/supertex  
(800) 346-6873  
448  
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