Datasheet > TN2435

TN2435

更新时间： 2024-09-20 14:53:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	759K
描述
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure

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TN2435 数据手册

TN2435

N-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• Low Threshold

The TN2435 low-threshold Enhancement-mode

(normally-off) transistor uses a vertical DMOS structure

and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

• High Input Impedance

• Low Input Capacitance

• Fast Switching Speeds

• Low On-Resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

• Logic-Level Interfaces (Ideal for TTL and CMOS)

• Solid-State Relays

• Battery-Operated Systems

• Photovoltaic Drives

• Analog Switches

• General Purpose Line Drivers

• Telecommunication Switches

Package Type

3-lead SOT-89

(Top view)

DRAIN

SOURCE

DRAIN

GATE

See Table 3-1 for pin information.

 2020 Microchip Technology Inc.

DS20005946A-page 1

12 3 4 5 6 7...14

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与TN2435相关器件

型号	品牌	获取价格	描述	数据表
TN2435N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2435N8-G	MICROCHIP	获取价格	0.365A, 350V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
TN2435N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.365A I(D), 350V, 6ohm, 1-Element, N-Channel, Silicon, Met
TN2435ND	SUPERTEX	获取价格	暂无描述
TN2435NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2460L	VISHAY	获取价格	N-Channel 240-V (D-S) MOSFET
TN2460L18	VISHAY	获取价格	76mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
TN2460L-18	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.075A I(D), 240V, 1-Element, N-Channel, Silicon, Me
TN2460L18-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.076A I(D), 240V, 1-Element, N-Channel, Silicon, Me
TN2460L18-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.076A I(D), 240V, 1-Element, N-Channel, Silicon, Me