TN2425

更新时间： 2024-11-07 22:42:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	448K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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TN2425 数据手册

TN2425

Low Threshold

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

Product marking for TO-243AA:

TN4C❋

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-243AA*

TN2425N8

DIE

250V

3.5Ω

1.5A

TN2425ND

where ❋ = 2-week alpha date code

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Features

Low Threshold DMOS Technology

❏

Low threshold

These low threshold enhancement-mode (normally-off) transis-

torsutilizeaverticalDMOSstructureandSupertex'swell-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transis-

tors and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally induced secondary breakdown.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, highbreakdownvoltage, highinputimpedance, lowinput

capacitance, and fast switching speeds are desired.

Applications

❏

Logic level interfaces – ideal for TTL and CMOS

Solid state relays

Package Option

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与TN2425相关器件

型号	品牌	获取价格	描述	数据表
TN2425_06	SUPERTEX	获取价格	Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET
TN2425N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2425N8-G	SUPERTEX	获取价格
TN2425ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2425TG	SUPERTEX	获取价格	Low Threshold Dual N-Channel Enhancement-Mode
TN2435	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2435	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN2435N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2435N8-G	MICROCHIP	获取价格	0.365A, 350V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
TN2435N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.365A I(D), 350V, 6ohm, 1-Element, N-Channel, Silicon, Met

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