Datasheet > TN2425_06

TN2425_06

更新时间： 2024-11-08 03:27:03

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	435K
描述
Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET

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TN2425_06 数据手册

TN2425

Low Threshold N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold

► High input impedance

► Low input capacitance

► Fast switching speeds

The Supertex TN2425 is a low threshold enhancement-

mode (normally-off) transistor that utilizes a vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturingprocess.Thiscombinationproducesadevice

with the power handling capabilities of bipolar transistors,

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

► Low ON-resistance

► Free from secondary breakdown

► Low input and output leakage

► Complementary N- and P-Channel devices

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Medical ultrasound pulsers

► Analog switches

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► General purpose line drivers

► Telecom switches

Ordering Information

Package Options

Product marking for TO-243AA:

R_DS(ON)

I_D(ON)

Device

BV_DSS/BV_DGS

250V

(max)

(min)

TN4C

TO-243AA (SOT-89)

where = 2-week alpha date code

TN2425

TN2425N8 TN2425N8-G

3.5Ω

1.5A

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁguration

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

20V

Drain to source voltage

Drain to gate voltage

TN2425

Gate to source voltage

Operating and storage temperature

Soldering temperature¹

-55°C to +150°C

+300°C

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-243AA (SOT-89)

Note 1. Distance of 1.6mm from case for 10 seconds.

(Top View)

12 3 4 5

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与TN2425_06相关器件

型号	品牌	获取价格	描述	数据表
TN2425N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2425N8-G	SUPERTEX	获取价格
TN2425ND	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2425TG	SUPERTEX	获取价格	Low Threshold Dual N-Channel Enhancement-Mode
TN2435	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2435	MICROCHIP	获取价格	This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS st
TN2435N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
TN2435N8-G	MICROCHIP	获取价格	0.365A, 350V, 6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA
TN2435N8-G	SUPERTEX	获取价格	Power Field-Effect Transistor, 0.365A I(D), 350V, 6ohm, 1-Element, N-Channel, Silicon, Met
TN2435ND	SUPERTEX	获取价格	暂无描述