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TN0102N2

更新时间： 2024-10-28 19:52:35
品牌 Logo 应用领域
超科 - SUPERTEX 输入元件开关晶体管
页数 文件大小 规格书
4页 34K
描述
Small Signal Field-Effect Transistor, 1.25A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

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中文翻译

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TN0102N2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CYLINDRICAL, O-MBCY-W3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.91
其他特性：HIGH INPUT IMPEDANCE外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：1.25 A最大漏源导通电阻：1.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：15 pF
JEDEC-95代码：TO-39JESD-30 代码：O-MBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
功耗环境最大值：3.5 W最大功率耗散 (Abs)：3.5 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

TN0102N2 数据手册

 浏览型号TN0102N2的Datasheet PDF文件第2页浏览型号TN0102N2的Datasheet PDF文件第3页浏览型号TN0102N2的Datasheet PDF文件第4页 
TN0102  
TN0104  
Low Threshold  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
VGS(th)  
ID(ON)  
(min)  
BVDGS  
(max)  
(max)  
1.6V  
1.6V  
1.6V  
TO-39  
TN0102N2  
TN0104N2  
—
TO-92  
TN0102N3  
TN0104N3  
—
TO-243AA*  
Die†  
20V  
1.8Ω  
1.8Ω  
2.0Ω  
2.0A  
2.0A  
2.0A  
—
—
TN0102ND  
TN0104ND  
—
40V  
40V  
TN0104N8  
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
† MIL visual screening available  
Features  
Low Threshold DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Low threshold —1.6V max.  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Complementary N- and P-channel devices  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where very low threshold  
voltage, highbreakdownvoltage, highinputimpedance, lowinput  
capacitance, and fast switching speeds are desired.  
Applications  
Package Options  
Logic level interfaces – ideal for TTL and CMOS  
Solid state relays  
Battery operated systems  
Photo voltaic drives  
D
G
D
S
Analog switches  
General purpose line drivers  
Telecom switches  
TO-243AA  
(SOT-89)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
BVDSS  
BVDGS  
± 20V  
S G D  
G
D
S
TO-92  
TO-39  
Case: DRAIN  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
* For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
7-31  
1234

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