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TN0102N3P007 PDF预览

TN0102N3P007

更新时间: 2024-10-28 19:08:39
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
4页 128K
描述
Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

TN0102N3P007 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):0.8 A
最大漏源导通电阻:1.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL功耗环境最大值:1 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

TN0102N3P007 数据手册

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