Datasheet > TN0104N3-GP005

TN0104N3-GP005

更新时间： 2024-10-28 15:54:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		开关晶体管
页数	文件大小	规格书
7页	730K
描述
SMALL SIGNAL, FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TN0104N3-GP005 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	compliant
风险等级：	5.63	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	0.45 A
最大漏源导通电阻：	1.8 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	15 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	N-CHANNEL
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

TN0104N3-GP005 数据手册

TN0104

Supertex inc.

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (1.6V max.)

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces

a device with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefﬁcient inherent in MOS devices. Characteristic

of all MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Ordering Information

Product Summary

R_DS(ON)

(max)

I_DSS

(min)

Part Number

Package Option

Packing

BV_DSX/BV_DGX

TN0104N3-G

TO-92

1000/Bag

40V

1.8Ω

2.0A

TN0104N3-G P002

TN0104N3-G P003

TN0104N3-G P005

TN0104N3-G P013

TN0104N3-G P014

TN0104N8-G

Pin Conﬁguration

TO-92

2000/Reel

DRAIN

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

GATE

Value

TO-92

TO-243AA (SOT-89)

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

Product Marking

Gate-to-source voltage

SiTN

0 1 0 4

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for Week Sealed

TN1LW

Package

θ_ja

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-TN0104

C080813

Supertex inc.

www.supertex.com

12 3 4 5 6 7

中文翻译

下载PDF

与TN0104N3-GP005相关器件

型号	品牌	获取价格	描述	数据表
TN0104N3-GP013	MICROCHIP	获取价格	Small Signal Field-Effect Transistor,
TN0104N3-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET
TN0104N3-GP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
TN0104N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal

与TN0104N3-GP005相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

TN0104N3-GP005

TN0104N3-GP005 技术参数

TN0104N3-GP005 数据手册

与TN0104N3-GP005相关器件

与TN0104N3-GP005相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TN0104N3-GP005

TN0104N3-GP005 技术参数

TN0104N3-GP005 数据手册

与TN0104N3-GP005相关器件

与TN0104N3-GP005相关文章

您还可以找

您在本页遇到什么问题？