Datasheet > TN0104N3-GP014

TN0104N3-GP014

更新时间： 2024-10-28 15:54:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		开关晶体管
页数	文件大小	规格书
7页	730K
描述
SMALL SIGNAL, FET

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中文翻译

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技术参数
数据手册

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TN0104N3-GP014 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	CYLINDRICAL, O-PBCY-T3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	40 V
最大漏极电流 (ID)：	0.45 A	最大漏源导通电阻：	1.8 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	15 pF
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	N-CHANNEL	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TN0104N3-GP014 数据手册

TN0104

Supertex inc.

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Low threshold (1.6V max.)

This low threshold, enhancement-mode (normally-off) transistor

utilizes a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination produces

a device with the power handling capabilities of bipolar

transistors and with the high input impedance and positive

temperature coefﬁcient inherent in MOS devices. Characteristic

of all MOS structures, this device is free from thermal runaway

and thermally-induced secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces – ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Ordering Information

Product Summary

R_DS(ON)

(max)

I_DSS

(min)

Part Number

Package Option

Packing

BV_DSX/BV_DGX

TN0104N3-G

TO-92

1000/Bag

40V

1.8Ω

2.0A

TN0104N3-G P002

TN0104N3-G P003

TN0104N3-G P005

TN0104N3-G P013

TN0104N3-G P014

TN0104N8-G

Pin Conﬁguration

TO-92

2000/Reel

DRAIN

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

GATE

Value

TO-92

TO-243AA (SOT-89)

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

Product Marking

Gate-to-source voltage

SiTN

0 1 0 4

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for Week Sealed

TN1LW

Package

θ_ja

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-TN0104

C080813

Supertex inc.

www.supertex.com

12 3 4 5 6 7

中文翻译

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与TN0104N3-GP014相关器件

型号	品牌	获取价格	描述	数据表
TN0104N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal
TN0104N3P017	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.8A I(D), 40V, 1-Element, N-Channel, Silicon, Metal

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