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TMS465409-50DGC PDF预览

TMS465409-50DGC

更新时间: 2024-11-12 20:00:19
品牌 Logo 应用领域
德州仪器 - TI 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
33页 519K
描述
16MX4 EDO DRAM, 50ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32

TMS465409-50DGC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP2, TSOP32,.46
针数:32Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.92访问模式:FAST PAGE WITH EDO
最长访问时间:50 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:20.95 mm内存密度:67108864 bit
内存集成电路类型:EDO DRAM内存宽度:4
功能数量:1端口数量:1
端子数量:32字数:16777216 words
字数代码:16000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:16MX4输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.0005 A
子类别:DRAMs最大压摆率:0.13 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:MOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

TMS465409-50DGC 数据手册

 浏览型号TMS465409-50DGC的Datasheet PDF文件第2页浏览型号TMS465409-50DGC的Datasheet PDF文件第3页浏览型号TMS465409-50DGC的Datasheet PDF文件第4页浏览型号TMS465409-50DGC的Datasheet PDF文件第5页浏览型号TMS465409-50DGC的Datasheet PDF文件第6页浏览型号TMS465409-50DGC的Datasheet PDF文件第7页 
TMS464409, TMS464409P, TMS465409, TMS465409P  
16 777 216 BY 4-BIT EXTENDED DATA OUT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMKS895A – MAY 1997 – REVISED OCTOBER 1997  
DGC PACKAGE  
(TOP VIEW)  
Organization . . . 16777216 by 4 Bits  
Single 3.3-V Power Supply  
(±0.3-V Tolerance)  
V
V
SS  
1
32  
31  
30  
29  
28  
27  
CC  
Performance Ranges:  
DQ1  
DQ2  
NC  
NC  
NC  
NC  
W
DQ4  
DQ3  
NC  
2
ACCESS ACCESS ACCESS EDO  
3
TIME  
TIME  
TIME  
CYCLE  
4
t
t
t
t
HPC  
RAC  
CAC  
AA  
NC  
5
(MAX)  
’46x409/P-40 40 ns  
’46x409/P-50 50 ns  
’46x409/P-60 60 ns  
(MAX)  
11 ns  
13 ns  
15 ns  
(MAX)  
20 ns  
25 ns  
30 ns  
(MIN)  
16 ns  
20 ns  
25 ns  
NC  
6
7
26 CAS  
8
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
A12  
A11  
A10  
A9  
9
RAS  
A0  
Extended-Data-Out (EDO) Operation  
CAS-Before-RAS (CBR) Refresh  
10  
11  
12  
13  
14  
15  
16  
A1  
Long Refresh Period (See Available  
Options Table)  
A2  
A3  
A8  
Low-Power, Self-Refresh Version  
(TMS46x409P)  
A4  
A7  
A5  
A6  
V
V
3-State Unlatched Output  
CC  
SS  
All Inputs/Outputs and Clocks Are  
Low-Voltage TTL (LVTTL) Compatible  
A12 is NC for TMS465409 and TMS465409P.  
High-Reliability Plastic 32-Lead  
400-Mil-Wide Thin Small-Outline (TSOP)  
Package (DGC Suffix)  
PIN NOMENCLATURE  
A0A12  
CAS  
Address Inputs  
Column-Address Strobe  
Data In/Data Out  
No Internal Connection  
Output Enable  
Operating Free-Air Temperature Range  
DQ1DQ4  
NC  
0°C to 70°C  
OE  
RAS  
W
Row-Address Strobe  
Write Enable  
AVAILABLE OPTIONS  
V
3.3-V Supply  
Ground  
SELF-REFRESH  
BATTERY  
RAS-ONLY  
REFRESH  
CYCLES  
CBR  
REFRESH  
CYCLES  
CC  
V
SS  
DEVICE  
BACKUP  
TMS464409  
TMS464409P  
TMS465409  
TMS465409P  
YES  
8192 in 64 ms  
4096 in 64 ms  
8192 in 128 ms 4096 in 128 ms  
4096 in 64 ms 4096 in 64 ms  
4096 in 128 ms 4096 in 128 ms  
YES  
description  
The TMS464409 and TMS465409 series are low-voltage, 67108864-bit dynamic random-access memories  
(DRAMs), organized as 16777216 words of 4 bits each. The TMS464409P and TMS465409P series are  
high-speed, low-voltage, low-power, self-refresh, 67108864-bit DRAMs, organized as 16777216 words of  
4 bits each. Both sets of devices employ state-of-the-art technology for high performance, reliability, and low  
power.  
ThesedevicesfeaturemaximumRASaccesstimesof40, 50, and60ns. Allinputsandoutputs, includingclocks,  
are compatible with LVTTL. All addresses and data-in lines are latched on chip to simplify system design. Data  
out is unlatched to allow greater system flexibility.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCT PREVIEW information concerns products in the formative or  
design phase of development. Characteristic data and other  
specifications are design goals. Texas Instruments reserves the right to  
change or discontinue these products without notice.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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