Datasheet > TMS44409

TMS44409

更新时间： 2024-11-10 22:49:39

品牌	Logo	应用领域
德州仪器 - TI		存储
页数	文件大小	规格书
26页	413K
描述
1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

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TMS44409 数据手册

TMS44409, TMS44409P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 – JULY1995

DJ PACKAGE

(TOP VIEW)

DGA PACKAGE

(TOP VIEW)

Organization . . . 1048576 × 4

Single 5-V Power Supply (±10% Tolerance)

Performance Ranges:

DQ1

DQ2

RAS

DQ1

DQ2

RAS

ACCESS ACCESS ACCESS

TIME TIME TIME

(t (t (t

EDO

CYCLE

DQ4

DQ3

CAS

DQ4

DQ3

CAS

)

HPC)

RAC CAC AA

(MAX)

’44409/P-60 60 ns

’44409/P-70 70 ns

’44409/P-80 80 ns

(MAX)

15 ns

18 ns

20 ns

(MAX)

30 ns

35 ns

40 ns

(MIN)

25 ns

30 ns

35 ns

Extended Data Out (EDO) Operation

CAS-Before-RAS (CBR) Refresh

3-State Unlatched Output

Low Power Dissipation

All Inputs/Outputs and Clocks are

TTL-Compatible

Long Refresh Period

– 1 024 Cycle Refresh in 16 ns (max)

– 128 ms on Low Power, Self-Refresh

Version (TMS44409P Only)

PIN NOMENCLATURE

A0–A9

Address Inputs

Operating Free-Air Temperature Range

CAS

Column-Address Strobe

0°C to 70°C

DQ1 – DQ4

Data In/Data Out

Output Enable

Row-Address Strobe

5-V Supply

description

RAS

The TMS44409 is a high-speed 4194304-bit

dynamic random-access memory (DRAM) orga-

nized as 1048576 words of four bits each. This

device features maximum RAS access times of

60 ns, 70 ns and 80 ns. Maximum power

consumption is as low as 385 mW operating and

6 mW standby. All inputs and outputs, including

Ground

Write Enable

clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system

design. Data out is unlatched to allow greater system flexibility.

The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.

All versions of the TMS44409/P are offered in a 300-mil 20/26 J-lead plastic surface-mount SOJ package (DJ

suffix) and a 20/26-lead plastic small outline package (DGA suffix). These devices are characterized for

operation from 0°C to 70°C.

ADVANCE INFORMATION concerns new products in the sampling or

preproduction phase of development. Characteristic data and other

specifications are subject to change without notice.

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

12 3 4 5 6 7...26

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与TMS44409相关器件

型号	品牌	获取价格	描述	数据表
TMS44409-60DGA	TI	获取价格	1MX4 EDO DRAM, 60ns, PDSO20, PLASTIC, SOP-26/20
TMS44409-60DJ	TI	获取价格	1MX4 EDO DRAM, 60ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44409-70DJ	TI	获取价格	1MX4 EDO DRAM, 70ns, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
TMS44409-80DGA	TI	获取价格	1MX4 EDO DRAM, 80ns, PDSO20, PLASTIC, SOP-26/20
TMS44409P	TI	获取价格	1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
TMS44409P-70DGA	TI	获取价格	1MX4 EDO DRAM, 70ns, PDSO20, PLASTIC, SOP-26/20
TMS44410-10SD	TI	获取价格	1MX4 FAST PAGE DRAM, 100ns, PZIP20, PLASTIC, ZIP-20
TMS44410-60DM	TI	获取价格	1MX4 FAST PAGE DRAM, 60ns, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20
TMS44460-10DJ	TI	获取价格	1MX4 FAST PAGE DRAM, 100ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS44460-70DJ	ROCHESTER	获取价格	1MX4 FAST PAGE DRAM, 70ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24

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