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TMS44409P PDF预览

TMS44409P

更新时间： 2024-09-22 22:36:27
品牌 Logo 应用领域
德州仪器 - TI 存储
页数 文件大小 规格书
26页 413K
描述
1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

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TMS44409P 数据手册

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TMS44409, TMS44409P  
1048576-WORD BY 4-BIT  
DYNAMIC RANDOM-ACCESS MEMORY  
SMHS563 – JULY1995  
DJ PACKAGE  
(TOP VIEW)  
DGA PACKAGE  
(TOP VIEW)  
Organization . . . 1048576 × 4  
Single 5-V Power Supply (±10% Tolerance)  
Performance Ranges:  
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
DQ1  
DQ2  
W
RAS  
A9  
1
2
3
4
5
26  
25  
24  
23  
22  
V
SS  
SS  
ACCESS ACCESS ACCESS  
TIME TIME TIME  
(t (t (t  
EDO  
CYCLE  
DQ4  
DQ3  
CAS  
OE  
DQ4  
DQ3  
CAS  
OE  
)
)
)
(t  
HPC)  
RAC CAC AA  
(MAX)  
’44409/P-60 60 ns  
’44409/P-70 70 ns  
’44409/P-80 80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
(MIN)  
25 ns  
30 ns  
35 ns  
Extended Data Out (EDO) Operation  
CAS-Before-RAS (CBR) Refresh  
3-State Unlatched Output  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
9
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
10  
11  
12  
13  
10  
11  
12  
13  
Low Power Dissipation  
All Inputs/Outputs and Clocks are  
TTL-Compatible  
V
V
CC  
CC  
Long Refresh Period  
– 1 024 Cycle Refresh in 16 ns (max)  
– 128 ms on Low Power, Self-Refresh  
Version (TMS44409P Only)  
PIN NOMENCLATURE  
A0–A9  
Address Inputs  
Operating Free-Air Temperature Range  
CAS  
Column-Address Strobe  
0°C to 70°C  
DQ1 – DQ4  
OE  
Data In/Data Out  
Output Enable  
Row-Address Strobe  
5-V Supply  
description  
RAS  
V
V
CC  
The TMS44409 is a high-speed 4194304-bit  
dynamic random-access memory (DRAM) orga-  
nized as 1048576 words of four bits each. This  
device features maximum RAS access times of  
60 ns, 70 ns and 80 ns. Maximum power  
consumption is as low as 385 mW operating and  
6 mW standby. All inputs and outputs, including  
Ground  
SS  
W
Write Enable  
clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system  
design. Data out is unlatched to allow greater system flexibility.  
The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.  
All versions of the TMS44409/P are offered in a 300-mil 20/26 J-lead plastic surface-mount SOJ package (DJ  
suffix) and a 20/26-lead plastic small outline package (DGA suffix). These devices are characterized for  
operation from 0°C to 70°C.  
Copyright 1995, Texas Instruments Incorporated  
ADVANCE INFORMATION concerns new products in the sampling or  
preproduction phase of development. Characteristic data and other  
specifications are subject to change without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...26

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与TMS44409P相关器件

型号 品牌 获取价格 描述 数据表
TMS44409P-70DGA TI

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 		1MX4 EDO DRAM, 70ns, PDSO20, PLASTIC, SOP-26/20
TMS44410-10SD TI

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 		1MX4 FAST PAGE DRAM, 100ns, PZIP20, PLASTIC, ZIP-20
TMS44410-60DM TI

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 		1MX4 FAST PAGE DRAM, 60ns, PDSO20, 0.350 INCH, PLASTIC, SOJ-26/20
TMS44460-10DJ TI

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 		1MX4 FAST PAGE DRAM, 100ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS44460-70DJ ROCHESTER

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 		1MX4 FAST PAGE DRAM, 70ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS44460-70DJ TI

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 		1MX4 FAST PAGE DRAM, 70ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS44460-80DJ TI

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 		1MX4 FAST PAGE DRAM, 80ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS44460P-80DGA TI

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 		1MX4 FAST PAGE DRAM, 80ns, PDSO24, PLASTIC, TSOP-26/24
TMS44460P-80DJ TI

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 		1MX4 FAST PAGE DRAM, 80ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS4461 TI

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 		GRAPHICS SYSTEM PROCESSOR

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