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TMMBAT42FILM PDF预览

TMMBAT42FILM

更新时间: 2024-02-11 21:47:52
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管
页数 文件大小 规格书
4页 63K
描述
SMALL SIGNAL SCHOTTKY DIODES

TMMBAT42FILM 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:15 weeks
风险等级:1.66Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 VJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:4 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向电流:0.5 µA
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:30
Base Number Matches:1

TMMBAT42FILM 数据手册

 浏览型号TMMBAT42FILM的Datasheet PDF文件第2页浏览型号TMMBAT42FILM的Datasheet PDF文件第3页浏览型号TMMBAT42FILM的Datasheet PDF文件第4页 
TMMBAT 42  
TMMBAT 43  
®
SMALL SIGNAL SCHOTTKY DIODES  
DESCRIPTION  
MINIMELF  
(Glass)  
General purpose, metal to silicon diodes featuring  
very low turn-on voltage fast switching.  
These devices have integrated protection against  
excessive voltage such as electrostatic discharges.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive Peak Reverse Voltage  
Value  
Unit  
V
30  
Forward Continuous Current  
200  
500  
mA  
mA  
T = 25 C  
°
l
IFRM  
Repetitive Peak Fordware Current  
tp 1s  
0.5  
δ ≤  
tp = 10ms  
T = 65 C  
IFSM  
Ptot  
Surge non Repetitive Forward Current  
Power Dissipation  
4
A
200  
mW  
°
l
Tstg  
Tj  
Storage and Junction Temperature Range  
- 65 to 150  
- 65 to 125  
C
C
°
°
TL  
Maximum Temperature for Soldering during 15s  
260  
C
°
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
C/W  
Rth(j-l)  
Junction-leads  
300  
°
August 1999 Ed: 1A  
1/4  

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