Datasheet > TMMBT3904L

TMMBT3904L

更新时间： 2024-10-01 17:02:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	354K
描述
40V,0.2A,General Purpose NPN Bipolar Transistor

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TMMBT3904L 数据手册

Product Specification

NPN SWITCHING TRANSISTOR

TMMBT3904L

FEATURES



Epitaxial planar die construction

Complementary PNP type available

(TMMBT3906L)



Collector Current Capability I_CM= 200mA

Collector-emitter Voltage V_CEO= 40V

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



General switching and amplification

DFN1006-3

ORDERING INFORMATION

Type No.

Marking

1AM

Package Code

DFN1006-3

TMMBT3904L

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Value

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

200

100

150

°C

I_CM

I_BM

P_tot

total power dissipation

storage temperature

T_j,T_stg

-55 to +150

STM0715A: September 2020

www.gmesemi.com

12 3 4

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