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TMMBAT46FILM PDF预览

TMMBAT46FILM

更新时间: 2024-12-01 12:28:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 整流二极管小信号肖特基二极管
页数 文件大小 规格书
4页 63K
描述
SMALL SIGNAL SCHOTTKY DIODE

TMMBAT46FILM 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:MELF包装说明:GLASS, MINIMELF-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:15 weeks风险等级:1.27
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.75 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-65 °C
最大输出电流:0.15 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - annealed端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:30
Base Number Matches:1

TMMBAT46FILM 数据手册

 浏览型号TMMBAT46FILM的Datasheet PDF文件第2页浏览型号TMMBAT46FILM的Datasheet PDF文件第3页浏览型号TMMBAT46FILM的Datasheet PDF文件第4页 
TMMBAT 46  
®
SMALL SIGNAL SCHOTTKY DIODE  
MINIMELF  
(Glass)  
DESCRIPTION  
General purpose, metal to silicon diode featuring  
high breakdown voltage low turn-on voltage.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF  
Parameter  
Repetitive Peak Reverse Voltage  
Value  
100  
Unit  
V
Forward Continuous Current  
150  
mA  
mA  
T = 25 C  
°
l
tp 1s  
350  
IFRM  
Repetitive Peak Fordware Current  
0.5  
δ ≤  
tp = 10ms  
T = 80 C  
IFSM  
Ptot  
Surge non Repetitive Forward Current  
Power Dissipation  
750  
150  
mA  
mW  
°
l
Tstg  
Tj  
Storage and Junction Temperature Range  
- 65 to + 150  
- 65 to + 125  
C
C
°
°
TL  
Maximum Temperature for Soldering during 15s  
260  
C
°
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
C/W  
Rth(j-l)  
Junction-leads  
300  
°
August 1999 Ed: 1A  
1/4  

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