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TMMBT3906T PDF预览

TMMBT3906T

更新时间: 2024-11-12 17:01:07
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 338K
描述
40V,0.2A,General Purpose PNP Bipolar Transistor

TMMBT3906T 数据手册

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Product Specification  
PNP General Purpose Transistor  
TMMBT3906T  
FEATURES  
Epitaxial planar die construction  
Complementary NPN type available (TMMBT3904T)  
Low Current (Max: -200mA)  
Low Voltage(Max: -40V)  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
APPLICATIONS  
Ideal for medium power amplification and switching  
SOT-523  
ORDERING INFORMATION  
Type No.  
Marking  
3N  
Package Code  
TMMBT3906T  
SOT-523  
MAXIMUM RATING @ Ta=25unless otherwise specified  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Value  
-40  
UNIT  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
-40  
V
-5  
V
collector current (DC)  
Power dissipation  
-200  
150  
mA  
mW  
°C /W  
°C  
Pd  
RθJA  
Tstg  
Thermal resistance, junction to Ambient  
storage temperature range  
junction temperature  
833  
-55 to +150  
150  
TJ  
°C  
STM0632A: April 2020  
www.gmesemi.com  
1

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