Datasheet > TMMBT3906T

TMMBT3906T

更新时间： 2024-04-09 18:59:45

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	338K
描述
40V,0.2A,General Purpose PNP Bipolar Transistor

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TMMBT3906T 数据手册

Product Specification

PNP General Purpose Transistor

TMMBT3906T

FEATURES



Epitaxial planar die construction

Complementary NPN type available (TMMBT3904T)

Low Current (Max: -200mA)

Low Voltage(Max: -40V)

Halogen free

Qualified to AEC-Q101 standards for high reliability

APPLICATIONS



Ideal for medium power amplification and switching

SOT-523

ORDERING INFORMATION

Type No.

Marking

Package Code

TMMBT3906T

SOT-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Value

-40

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

-40

-5

collector current (DC)

Power dissipation

-200

150

°C /W

°C

P_d

R_θJA

T_stg

Thermal resistance, junction to Ambient

storage temperature range

junction temperature

833

-55 to +150

150

T_J

°C

STM0632A: April 2020

www.gmesemi.com

12 3 4

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