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TMMBT3904R PDF预览

TMMBT3904R

更新时间: 2024-04-09 19:03:18
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 356K
描述
40V,0.2A,General Purpose NPN Bipolar Transistor

TMMBT3904R 数据手册

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NPN Silicon Epitaxial Planar Transistor  
TMMBT3904R  
Features  
Epitaxial planar die construction  
Ideal for low power amplification and switching  
Complementary PNP type available TMMBT3906R  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: SOT-223  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-223  
Ordering Information  
Part Number  
Package  
SOT-223  
Shipping Quantity  
Marking Code  
TMMBT3904R  
4000 pcs / Tape & Reel  
1AM  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (Continuous)  
Collector Current Peak Pulse Width  
Peak Base Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
60  
Unit  
V
40  
V
6
V
0.2  
0.2  
0.1  
A
ICM  
A
IBM  
A
Thermal Characteristics  
Parameter  
Power Dissipation (Collector) *1  
Thermal Resistance (Junction-to-Ambient)  
Junction Temperature  
Symbol  
PD  
Value  
1.15  
Unit  
W
RθJA  
TJ  
108  
C/W  
-55 ~ +150  
°C  
°C  
Storage Temperature Range  
TSTG  
-55 ~ +150  
Note1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2  
STM0813A: December 2023 [2.0]  
www.gmesemi.com  
1

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