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TM124BBJ32U PDF预览

TM124BBJ32U

更新时间: 2024-09-12 22:27:19
品牌 Logo 应用领域
德州仪器 - TI 存储内存集成电路动态存储器
页数 文件大小 规格书
10页 145K
描述
32-BIT DYNAMIC RAM MODULE

TM124BBJ32U 技术参数

是否无铅: 含铅生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N内存集成电路类型:FAST PAGE DRAM MODULE
Base Number Matches:1

TM124BBJ32U 数据手册

 浏览型号TM124BBJ32U的Datasheet PDF文件第2页浏览型号TM124BBJ32U的Datasheet PDF文件第3页浏览型号TM124BBJ32U的Datasheet PDF文件第4页浏览型号TM124BBJ32U的Datasheet PDF文件第5页浏览型号TM124BBJ32U的Datasheet PDF文件第6页浏览型号TM124BBJ32U的Datasheet PDF文件第7页 
TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE  
TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE  
SMMS661 – JANUARY 1996  
Organization  
TM124BBJ32F . . . 1 048 576 × 32  
TM248CBJ32F . . . 2 097 152 × 32  
Presence Detect  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
Single 5-V Power Supply (±10% Tolerance)  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
72-Pin Single In-Line Memory Module  
(SIMM) for Use With Socket  
(MAX)  
’124BBJ32F-60 60 ns  
’124BBJ32F-70 70 ns  
’124BBJ32F-80 80 ns  
’248CBJ32F-60 60 ns  
’248CBJ32F-70 70 ns  
’248CBJ32F-80 80 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
30 ns  
35 ns  
40 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
TM124BBJ32F – Utilizes Two 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
TM248CBJ32F – Utilizes Four 16-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
Low Power Dissipation  
Long Refresh Period  
Operating Free-Air Temperature Range  
16 ms (1024 Cycles)  
0°C to 70°C  
All Inputs, Outputs, Clocks Fully  
Gold-Tabbed Versions Available:  
TTL-Compatible  
TM124BBJ32F  
TM248CBJ32F  
3-State Output  
Common CAS Control for Eight Common  
Tin-Lead (Solder) Tabbed Versions  
Available:  
Data-In and Data-Out Lines in Four Blocks  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
TM124BBJ32U  
TM248CBJ32U  
description  
TM124BBJ32F  
The TM124BBJ32F is a 4-MByte dynamic random-access memory (DRAM) organized as four times  
1048576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ, 1 048 576 × 16-bit DRAMs, each  
in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ is  
described in the TMS418160 data sheet. The TM124BBJ32F SIMM is available in the single-sided BJ-leadless  
module for use with sockets.  
TM248CBJ32F  
The TM248CBJ32F is an 8-MByte DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM  
is composed of four TMS418160DZ, 1048576 × 16-bitDRAMs, eachina42-leadplasticSOJpackagemounted  
on a substrate with decoupling capacitors. The TMS418160DZ is described in the TMS418160 data sheet. The  
TM248CBJ32F SIMM is available in the double-sided BJ-leadless module for use with sockets.  
operation  
The TM124BBJ32F operates as two TMS418160DZs connected as shown in the functional block diagram and  
Table 1. The TM248CBJ32F operates as four TMS418160DZs connected as shown in the functional block  
diagram and Table 1. The common I/O feature dictates the use of early-write cycles to prevent contention on  
D and Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1996, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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