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TM124BBK32-80 PDF预览

TM124BBK32-80

更新时间： 2024-10-31 22:11:19
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
11页 154K
描述
DYNAMIC RAM MODULE

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TM124BBK32-80 技术参数

生命周期：Obsolete零件包装代码：SIMM
包装说明：SIMM, SSIM72针数：72
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.02风险等级：5.72
访问模式：FAST PAGE最长访问时间：80 ns
其他特性：RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型：COMMON
JESD-30 代码：R-XSMA-N72内存密度：33554432 bit
内存集成电路类型：FAST PAGE DRAM MODULE内存宽度：32
功能数量：1端口数量：1
端子数量：72字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：1MX32输出特性：3-STATE
封装主体材料：UNSPECIFIED封装代码：SIMM
封装等效代码：SSIM72封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY电源：5 V
认证状态：Not Qualified刷新周期：1024
座面最大高度：25.527 mm自我刷新：NO
最大待机电流：0.008 A子类别：DRAMs
最大压摆率：0.64 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子节距：1.27 mm端子位置：SINGLE
Base Number Matches：1

TM124BBK32-80 数据手册

 浏览型号TM124BBK32-80的Datasheet PDF文件第2页浏览型号TM124BBK32-80的Datasheet PDF文件第3页浏览型号TM124BBK32-80的Datasheet PDF文件第4页浏览型号TM124BBK32-80的Datasheet PDF文件第5页浏览型号TM124BBK32-80的Datasheet PDF文件第6页浏览型号TM124BBK32-80的Datasheet PDF文件第7页 
TM124BBK32, TM124BBK32S 1048576 BY 32-BIT  
TM248CBK32, TM248CBK32S 2097152 BY 32-BIT  
DYNAMIC RAM MODULE  
SMMS132D – JANUARY 1991 – REVISED JUNE 1995  
Organization  
Performance Ranges:  
TM124BBK32 . . . 1 048 576 × 32  
TM248CBK32 . . . 2 097 152 × 32  
ACCESS  
TIME  
ACCESS  
TIME  
READ  
OR  
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
CAC  
Single 5-V Power Supply (±10 % Tolerance)  
72-pin Single In-Line Memory Module  
(SIMM) for Use With Sockets  
(MAX)  
60 ns  
70 ns  
80 ns  
60 ns  
70 ns  
80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
15 ns  
18 ns  
20 ns  
TM124BBK32-60  
TM124BBK32-70  
TM124BBK32-80  
TM248CBK32-60  
TM248CBK32-70  
TM248CBK32-80  
110 ns  
130 ns  
150 ns  
110 ns  
130 ns  
150 ns  
TM124BBK32-Utilizes Eight 4-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
TM248CBK32-Utilizes Sixteen 4-Megabit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
Low Power Dissipation  
Distributed Refresh Period  
16 ms (1024 Cycles)  
Operating Free-Air-Temperature Range  
0°C to 70°C  
All Inputs, Outputs, Clocks Fully TTL  
Compatible  
†
Gold-Tabbed Versions Available:  
– TM124BBK32  
– TM248CBK32  
3-State Output  
Tin-Lead (Solder) Tabbed Versions  
Available:  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines, In Four Blocks  
– TM124BBK32S  
– TM248CBK32S  
Presence Detect  
description  
TM124BBK32  
The TM124BBK32 is a dynamic random-access memory (DRAM) organized as four times 1048576 × 8 in a  
72-pin leadless single in-line memory module (SIMM). The SIMM is composed of eight TMS44400, 1048576  
× 4-bit DRAMs, each in 20/26-lead plastic SOJ packages, mounted on a substrate together with decoupling  
capacitors. Each TMS44400 is described in the TMS44400 data sheet.  
The TM124BBK32 is available in the single-sided BK leadless module for use with sockets.  
The TM124BBK32 features RAS access times of 60 ns, 70 ns and 80 ns. This device is rated for operation from  
0°C to 70°C  
TM248CBK32  
The TM248CBK32 is a dynamic random-access memory organized as four times 2097152 × 8 in a 72-pin  
leadless SIMM. The SIMM is composed of sixteen TMS44400, 1048576 × 4-bit dynamic RAMs, each in  
20/26-lead plastic SOJ packages SOJs, mounted on a substrate together with decoupling capacitors. Each  
TMS44400 is described in the TMS44400 data sheet.  
The TM248CBK32 is available in the double-sided BK leadless module for use with sockets.  
The TM248CBK32 features RAS access times of 60 ns, 70 ns and 80 ns. This device is rated for operation from  
0°C to 70°C  
operation  
TM124BBK32  
The TM124BBK32 operates as eight TMS44400DJs connected as shown in the functional block diagram. Refer  
to the TMS44400 data sheet for details of operation. The common I/O feature of the TM124BBK32 dictates the  
use of early write cycles to prevent contention on D and Q.  
†
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...11

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与TM124BBK32-80相关器件

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TM124BBK32-80L TI

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 		1MX32 FAST PAGE DRAM MODULE, 80ns, SMA72, SIMM-72
TM124BBK32-80S TI

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 		TM124BBK32-80S
TM124BBK32F TI

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 		32-BIT DYNAMIC RAM MODULE
TM124BBK32F-60 TI

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 		1MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM124BBK32F-60L TI

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 		1MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM124BBK32F-70 TI

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 		1MX32 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72
TM124BBK32H TI

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 		DYNAMIC RAM MODULES
TM124BBK32H-50 TI

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 		1MX32 FAST PAGE DRAM MODULE, 50ns, SMA72, SIMM-72
TM124BBK32H-60 TI

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 		1MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72
TM124BBK32I-50 TI

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 		1MX32 FAST PAGE DRAM MODULE, 50ns, SMA72, SIMM-72

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