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TM124BBK32H

更新时间: 2024-09-15 11:58:39
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德州仪器 - TI /
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9页 146K
描述
DYNAMIC RAM MODULES

TM124BBK32H 数据手册

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TM124BBK32H, TM124BBK32I 1048576 BY 32-BIT  
TM248CBK32H, TM248CBK32I 2097152 BY 32-BIT  
DYNAMIC RAM MODULES  
SMMS679 – MARCH 1997  
Organization  
Presence Detect  
TM124BBK32H/I . . . 1 048 576 × 32  
TM248CBK32H/I . . . 2 097 152 × 32  
Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME  
OR  
Single 5-V Power Supply (±10% Tolerance)  
t
t
t
WRITE  
CYCLE  
(MIN)  
RAC  
AA  
CAC  
72-Pin Single In-Line Memory Module  
(SIMM) for Use With Socket  
(MAX)  
’124BBK32H/I-50 50 ns  
’124BBK32H/I-60 60 ns  
’124BBK32H/I-70 70 ns  
’248CBK32H/I-50 50 ns  
’248CBK32H/I-60 60 ns  
’248CBK32H/I-70 70 ns  
(MAX)  
25 ns  
30 ns  
35 ns  
25 ns  
30 ns  
35 ns  
(MAX)  
13 ns  
15 ns  
18 ns  
13 ns  
15 ns  
18 ns  
90 ns  
110 ns  
130 ns  
90 ns  
110 ns  
130 ns  
TM124BBK32H/I – Uses Two 16M-Bit  
DRAMs in Plastic Small-Outline J-Lead  
(SOJ) Packages  
TM248CBK32H/I – Uses Four 16M-Bit  
DRAMs in Plastic SOJ Packages  
Long Refresh Period  
16 ms (1024 Cycles)  
Low Power Dissipation  
Operating Free-Air Temperature Range  
All Inputs, Outputs, Clocks Fully  
TTL-Compatible  
0°C to 70°C  
Gold-Tabbed Versions Available:  
3-State Output  
TM124BBK32H  
TM248CBK32H  
Common CAS Control for Eight Common  
Data-In and Data-Out Lines in Four Blocks  
Tin-Lead (Solder) Tabbed Versions  
Available:  
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR), RAS-Only, and  
Hidden Refresh  
TM124BBK32I  
TM248CBK32I  
description  
TM124BBK32H/I  
The TM124BBK32H/I is a 32M-bit dynamic random-access memory (DRAM) module organized as four times  
1048576 × 8 in a 72-pin SIMM. The SIMM is composed of two TMS418160ADZ, 1 048 576 × 16-bit DRAMs,  
each in a 42-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The  
TMS418160ADZ is described in the TMS418160A data sheet (literature number SMKS891). The  
TM124BBK32H/I SIMM is available in the single-sided BK-leadless module for use with sockets.  
TM248CBK32H/I  
The TM248CBK32H/I is a 64M-bit DRAM organized as four times 2 097 152 × 8 in a 72-pin SIMM. The SIMM  
is composed of four TMS418160ADZ, 1048576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package  
mountedonasubstratewithdecouplingcapacitors. TheTMS418160ADZisdescribedintheTMS418160Adata  
sheet (literature number SMKS891). The TM248CBK32H/I SIMM is available in the double-sided BK-leadless  
module for use with sockets.  
operation  
The TM124BBK32H/I operates as two TMS418160ADZ DRAMs, connected as shown in the functional block  
diagram and Table 1. The TM248CBK32H/I operates as four TMS418160ADZ DRAMs connected as shown  
in the functional block diagram and Table 1. The common I/O feature dictates the use of early-write cycles to  
prevent contention on D and Q.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

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