Datasheet > TK100A06N1

TK100A06N1

更新时间： 2024-11-18 12:05:43

品牌	Logo	应用领域
东芝 - TOSHIBA		稳压器开关
页数	文件大小	规格书
9页	236K
描述
Switching Voltage Regulators

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TK100A06N1 数据手册

TK100A06N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK100A06N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

TO-220SIS

2012-08-03

Rev.1.0

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
TK100A08N1	TOSHIBA	获取价格	N-ch MOSFET, 80 V, 0.0032 Ω@10V, TO-220SIS, U
TK100A10N1	TOSHIBA	获取价格	MOSFETs Silicon N-channel MOS (U-MOS-H)
TK100E06N1	TOSHIBA	获取价格	N-ch MOSFET, 60 V, 0.0023 Ω@10V, TO-220, U-MO
TK100E08N1	TOSHIBA	获取价格	Switching Voltage Regulators
TK100E10N1	TOSHIBA	获取价格	N-ch MOSFET, 100 V, 0.0034 Ω@10V, TO-220, U-M
TK100F04K3	TOSHIBA	获取价格	Swiching Regulator,DC-DC Converter Applications Motor Drive Applications
TK100F04K3L	TOSHIBA	获取价格	Nch 30V<VDSS≤60V
TK100F06K3	TOSHIBA	获取价格	Swiching Regulator,DC-DC Converter Applications Motor Drine Applications
TK100F06K3(TE24L)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-263ABVAR
TK100F06K3(TE24L,Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,100A I(D),TO-263ABVAR