Datasheet > TK100S04N1L

TK100S04N1L

更新时间： 2024-11-19 14:56:55

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TK100S04N1L 数据手册

TK100S04N1L

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK100S04N1L

1. Applications

•

Automotive

Switching Voltage Regulators

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

Start of commercial production

2013-01

2020-06-24

Rev.7.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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