5秒后页面跳转
TIP31BBS PDF预览

TIP31BBS

更新时间: 2024-01-14 00:25:54
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 87K
描述
暂无描述

TIP31BBS 数据手册

 浏览型号TIP31BBS的Datasheet PDF文件第1页浏览型号TIP31BBS的Datasheet PDF文件第2页浏览型号TIP31BBS的Datasheet PDF文件第3页浏览型号TIP31BBS的Datasheet PDF文件第5页浏览型号TIP31BBS的Datasheet PDF文件第6页 
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)  
1.0  
0.7  
D = 0.5  
0.5  
0.3  
0.2  
0.2  
0.1  
0.1  
0.07  
0.05  
P
(pk)  
Z
= r(t) R  
q
JC  
q
JC(t)  
0.05  
0.02  
R
(t) = 3.125°C/W MAX  
q
JC  
D CURVES APPLY FOR POWER  
PULSE TRAIN SHOWN  
READ TIME AT t  
t
1
0.03  
0.02  
t
1
2
0.01  
0.02  
T
− T = P  
C
Z
q
(pk) JC(t)  
J(pk)  
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.05 1.0  
0.01  
0.01  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0 k  
t, TIME (ms)  
Figure 4. Thermal Response  
10  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
5.0  
breakdown. Safe operating area curves indicate I − V  
C
CE  
100ꢀms  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
5.0ꢀms  
2.0  
1.0ꢀms  
SECONDARY BREAKDOWN  
LIMITED @ T 150°C  
THERMAL LIMIT @ T = 25°C  
1.0  
0.5  
The data of Figure 5 is based on T  
variable depending on conditions. Second breakdown pulse  
= 150_C; T is  
J(pk)  
C
J
C
limits are valid for duty cycles to 10% provided T  
(SINGLE PULSE)  
BONDING WIRE LIMIT  
J(pk)  
v 150_C.  
T
may be calculated from the data in  
J(pk)  
TIP31A, TIP32A  
TIP31B, TIP32B  
TIP31C, TIP32C  
0.2  
0.1  
CURVES APPLY  
BELOW RATED V  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
CEO  
5.0  
10  
20  
50  
100  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
Figure 5. Active Region Safe Operating Area  
3.0  
300  
I
= I  
B1 B2  
I /I = 10  
2.0  
T = +ꢂ25°C  
J
C B  
t ′  
s
200  
t = t − 1/8 t  
f
s
s
1.0  
t @ V = 30 V  
f CC  
T = 25°C  
J
0.7  
0.5  
100  
0.3  
0.2  
t @ V = 10 V  
f CC  
C
eb  
70  
50  
0.1  
0.07  
0.05  
C
cb  
0.03  
30  
0.03 0.05 0.07 0.1  
0.2 0.3  
0.5 0.7 1.0  
2.0 3.0  
0.1  
0.2 0.3 0.5  
1.0  
2.0 3.0 5.0  
10  
20 30 40  
I , COLLECTOR CURRENT (AMP)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Turn−Off Time  
Figure 7. Capacitance  
http://onsemi.com  
4
 

与TIP31BBS相关器件

型号 品牌 获取价格 描述 数据表
TIP31BD1 MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP31B-DR6259 RENESAS

获取价格

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31B-DR6260 RENESAS

获取价格

5A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31B-DR6280 RENESAS

获取价格

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP31BDW ONSEMI

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
TIP31BG ONSEMI

获取价格

NPN Bipolar Power Transistor
TIP31BL MOTOROLA

获取价格

Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP31BN MOTOROLA

获取价格

3A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP31BNPN CDIL

获取价格

PLASTIC POWER TRANSISTORS
TIP31-BP MCC

获取价格

Silicon NPN Power Transistors