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TIP145 PDF预览

TIP145

更新时间: 2024-11-03 22:42:15
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安森美 - ONSEMI 晶体晶体管局域网
页数 文件大小 规格书
6页 221K
描述
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP145 数据手册

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Order this document  
by TIP140/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for general–purpose amplifier and low frequency switching applications.  
High DC Current Gain — Min h  
FE  
= 1000 @ I = 5 A, V  
Collector–Emitter Sustaining Voltage — @ 30 mA  
= 4 V  
CE  
C
V
V
V
= 60 Vdc (Min) — TIP140, TIP145  
= 80 Vdc (Min) — TIP141, TIP146  
= 100 Vdc (Min) — TIP142, TIP147  
CEO(sus)  
CEO(sus)  
CEO(sus)  
Monolithic Construction with Built–In Base–Emitter Shunt Resistor  
MAXIMUM RATINGS  
*Motorola Preferred Device  
TIP140  
TIP145  
TIP141  
TIP146  
TIP142  
TIP147  
10 AMPERE  
DARLINGTON  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
60100 VOLTS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
60  
60  
80  
80  
100  
100  
V
CB  
EB  
V
5.0  
125 WATTS  
Collector Current — Continuous  
Peak (1)  
I
C
10  
15  
Base Current — Continuous  
Total Device Dissipation  
@ T = 25 C  
C
I
0.5  
Adc  
B
P
125  
Watts  
D
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Ambient  
R
1.0  
θJC  
θJA  
R
35.7  
CASE 340D–02  
(1) 5 ms,  
10% Duty Cycle.  
DARLINGTON SCHEMATICS  
NPN  
PNP  
COLLECTOR  
COLLECTOR  
TIP140  
TIP141  
TIP142  
TIP145  
TIP146  
TIP147  
BASE  
BASE  
8.0 k  
40  
8.0 k  
40  
EMITTER  
EMITTER  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996

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