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TIP120TU-F129

更新时间： 2024-11-05 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管功率双极晶体管
页数	文件大小	规格书
6页	254K
描述
Medium Power NPN Darlington Bipolar Power Transistor

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数据手册

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TIP120TU-F129 数据手册

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SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 100 mAdc

•

= 60 Vdc (Min) — TIP120, TIP125

= 80 Vdc (Min) — TIP121, TIP126

= 100 Vdc (Min) — TIP122, TIP127

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I = 5.0 Adc

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

TO–220AB Compact Package

*Motorola Preferred Device

*MAXIMUM RATINGS

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

65 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

5.0

8.0

Base Current

120

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.52

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction,

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.92

62.5

CASE 221A–06

TO–220AB

θJC

θJA

= 100 Ω.

(1) I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V

= 20 V, R

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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