TIP120UA

更新时间： 2024-01-19 05:15:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	254K
描述
5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TIP120UA 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.69	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	60 V	配置：	DARLINGTON
最小直流电流增益 (hFE)：	1000	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	65 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	4 MHz	Base Number Matches：	1

TIP120UA 数据手册

Order this document

by TIP120/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 4.0 Adc

Collector–Emitter Sustaining Voltage — @ 100 mAdc

•

= 60 Vdc (Min) — TIP120, TIP125

= 80 Vdc (Min) — TIP121, TIP126

= 100 Vdc (Min) — TIP122, TIP127

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I = 5.0 Adc

•

Monolithic Construction with Built–In Base–Emitter Shunt Resistors

TO–220AB Compact Package

*Motorola Preferred Device

*MAXIMUM RATINGS

TIP120,

TIP125

TIP121,

TIP126

TIP122,

TIP127

DARLINGTON

5 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

65 WATTS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

5.0

8.0

Base Current

120

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.52

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy (1)

Operating and Storage Junction,

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.92

62.5

CASE 221A–06

TO–220AB

θJC

θJA

= 100 Ω.

(1) I = 1 A, L = 100 mH, P.R.F. = 10 Hz, V

= 20 V, R

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

下载PDF

与TIP120UA相关器件

型号	品牌	描述	获取价格	数据表
TIP120WD	MOTOROLA	5A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB	获取价格
TIP121	COMSET	SILICON DARLINGTON POWER TRANSISTORS	获取价格
TIP121	BOURNS	NPN SILICON POWER DARLINGTONS	获取价格
TIP121	ONSEMI	Plastic Medium-Power Complementary Silicon Transistors	获取价格
TIP121	SAVANTIC	Silicon NPN Darlington Power Transistors	获取价格
TIP121	ISC	Silicon NPN Darlington Power Transistors	获取价格