Datasheet > TIP110BV

TIP110BV

更新时间： 2024-11-05 09:20:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
62页	434K
描述
TRANSISTOR 2 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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TIP110BV 数据手册

SEMICONDUCTOR TECHNICAL DATA

. . . designed for general–purpose amplifier and low–speed switching applications.

•

High DC Current Gain —

= 2500 (Typ) @ I = 1.0 Adc

Collector–Emitter Sustaining Voltage — @ 30 mAdc

•

= 60 Vdc (Min) — TIP110, TIP115

= 80 Vdc (Min) — TIP111, TIP116

= 100 Vdc (Min) — TIP112, TIP117

CEO(sus)

•

Low Collector–Emitter Saturation Voltage —

= 2.5 Vdc (Max) @ I = 2.0 Adc

CE(sat)

•

Monolithic Construction with Built–in Base–Emitter Shunt Resistors

TO–220AB Compact Package

*MAXIMUM RATINGS

*Motorola Preferred Device

TIP110,

TIP115

TIP111,

TIP116

TIP112,

TIP117

Rating

Symbol

Unit

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

50 WATTS

Collector–Emitter Voltage

CEO

100

Vdc

Collector–Base Voltage

Emitter–Base Voltage

Vdc

Adc

5.0

Collector Current — Continuous

Peak

2.0

4.0

Base Current

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.4

Watts

W/ C

Total Power Dissipation @ T = 25 C

Derate above 25 C

2.0

0.016

Watts

W/ C

Unclamped Inductive Load Energy —

Figure 13

Operating and Storage Junction

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristics

CASE 221A–06

TO–220AB

Symbol

Max

Unit

Thermal Resistance, Junction to Case

2.5

C/W

θJC

θJA

Thermal Resistance, Junction to Ambient

62.5

C/W

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

3–895

Motorola Bipolar Power Transistor Device Data

12 3 4 5 6 7...62

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