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TIP111

更新时间: 2024-11-04 04:28:27
品牌 Logo 应用领域
TAITRON 晶体晶体管
页数 文件大小 规格书
4页 194K
描述
Darlington Power Transistors (NPN)

TIP111 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:TO-220, 3 PINReach Compliance Code:unknown
风险等级:5.71最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):500JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

TIP111 数据手册

 浏览型号TIP111的Datasheet PDF文件第2页浏览型号TIP111的Datasheet PDF文件第3页浏览型号TIP111的Datasheet PDF文件第4页 
Darlington Power Transistors (NPN)  
TIP110/111/112  
Darlington Power Transistors (NPN)  
Features  
Designed for general-purpose amplifier and low speed  
switching applications  
RoHS Compliant  
TO-220  
Mechanical Data  
Case:  
Terminals:  
Weight:  
TO-220, Plastic Package  
Solderable per MIL-STD-202, Method 208  
0.08 ounces, 2.24 grams  
Maximum Ratings (T Ambient=25ºC unless noted otherwise)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Description  
Collector-Base Voltage  
TIP110  
60  
TIP111  
TIP112  
100  
Unit  
80  
80  
V
V
Collector-Emitter Voltage  
60  
100  
Emitter-Base Voltage  
5.0  
V
Collector Current Continuous  
2.0  
A
Collector Current Peak  
4.0  
A
ICM  
Base Current  
50  
mA  
W
IB  
Power Dissipation upto TC=25°C  
Power Dissipation upto TA=25°C  
Power Dissipation Derate above TA=25°C  
Thermal Resistance from Junction to Ambient in Free Air  
Thermal Resistance from Junction to Case  
Operating Junction and Storage Temperature Range  
50  
2.0  
W
PD  
16  
mW/° C  
° C /W  
° C /W  
° C  
62.5  
2.5  
RθJA  
RθJC  
-65 to +150  
TJ, TSTG  
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com  
Rev. A/AH 2008-06-13  
Page 1 of 4  
Tel: (800)-TAITRON (800)-824-8766  
Fax: (800)-TAITFA (800)-824-8329  
(661)-257-6060  
(661)-257-6415  

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