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TIP111NPN PDF预览

TIP111NPN

更新时间: 2024-11-05 01:01:47
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3页 271K
描述
PLASTIC POWER TRANSISTORS

TIP111NPN 数据手册

 浏览型号TIP111NPN的Datasheet PDF文件第2页浏览型号TIP111NPN的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
PLASTIC POWER TRANSISTORS  
TIP110 TIP115  
TIP111 TIP116  
TIP112 TIP117  
NPN  
PNP  
TO-220  
Plastic Package  
Intended for use in Medium Power Linear and Switching Applications  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)  
TIP110/115  
TIP111/116  
TIP112/117  
100  
DESCRIPTION  
SYMBOL  
UNIT  
VCEO  
60  
60  
80  
Collector Emitter Voltage  
V
VCBO  
VEBO  
IC  
80  
5
100  
Collector Base Voltage  
Emitter Base Voltage  
V
V
2
Collector Current Continuous  
Collector Current Peak  
Base Current  
A
ICM  
IB  
4
A
50  
50  
2
mA  
W
Power Dissipation upto Tc=25ºC  
Power Dissipation upto Ta=25ºC  
PD  
PD  
W
16  
Derate above 25ºC  
Operating And Storage  
Junction Temperature  
mW/ºC  
Tj , Tstg  
-65 to +150  
ºC  
THERMAL RESISTANCE  
Junction to Case  
Rth (j-c)  
Rth (j-a)  
2.5  
ºC/W  
ºC/W  
62.5  
Junction to Ambient in free air  
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)  
MIN  
MAX  
2.0  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
VCE= Half Rated VCEO  
VCB= Half Rated VCBO  
VEB=5V, IC=0  
UNIT  
mA  
mA  
mA  
V
I
Collector Cut Off Current  
Collector Cut Off Current  
Emitter Cut Off Current  
Collector Emitter (sus) Voltage  
CEO  
I
1.0  
CBO  
I
2.0  
EBO  
*VCEO(sus)  
IC=30mA, IB=0  
TIP110/115  
60  
80  
TIP111/116  
TIP112/117  
V
100  
V
Collector Emitter Saturation  
Voltage  
*VCE (sat)  
IC=2A, IB=8mA  
2.5  
2.8  
V
V
*V  
BE(on)  
IC=2A,VCE=4V  
IC=1A,VCE=4V  
IC=2A,VCE=4V  
Base Emitter On Voltage  
DC Current Gain  
*hFE  
1,000  
500  
*Pulse Test : Pulse width =300ms, Duty Cycle <2%  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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