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TIP111-BP PDF预览

TIP111-BP

更新时间: 2024-11-04 12:19:55
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 149K
描述
Silicon NPN Darlington Power Transistor

TIP111-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:2.24最大集电极电流 (IC):2 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):500JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

TIP111-BP 数据手册

 浏览型号TIP111-BP的Datasheet PDF文件第2页 
M C C  
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TM  
TIP110/111/112  
Micro Commercial Components  
Features  
Silicon NPN  
The complementary PNP types are the TIP115/116/117 respectively  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Darlington  
Power Transistor  
Classification Rating 94V-0 and MSL Rating 1  
Marking: Part number  
Absolute Maximum Ratings @ T  
a
= 25(unless otherwise noted)  
TO-220AB  
Symbol  
VCBO  
TIP110  
TIP111  
TIP112  
VCEO  
TIP110  
TIP111  
TIP112  
Parameter  
Value  
Unit  
60  
80  
100  
C
B
Collector-base voltage  
(Open emitter)  
V
S
F
60  
80  
100  
Q
Collector-emitter voltage  
(Open base)  
V
V
T
A
VEBO  
Emitter-base Voltage(Open collector)  
5
U
IC  
ICM  
IB  
Collector Current  
A
A
2
4
0.05  
1
2
3
Collector Current Pulse  
Base Current  
H
A
Total Device Dissipation(Ta=25℃)  
Total Device Dissipation(Tc=25℃)  
Junction Temperature  
W
W
2
50  
150  
PC  
K
TJ  
TSTG  
Storage Temperature Range  
-65 to +150  
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
V
L
J
Symbol  
Parameter  
Min  
Max  
Units  
D
R
VCEO(SUS)  
TIP110  
TIP111  
TIP112  
60  
80  
100  
G
Collector-emitter sustaining voltage  
( IC=30mA; IB=0)  
PIN 1.  
PIN 2.  
PIN 3.  
BASE  
COLLECTOR  
EMITTER  
V
N
Collector-emitter Saturation Voltage  
( IC=2A IB=-0.008A )  
DIMENSIONS  
VCE(sat)  
VBE  
2.5  
2.8  
V
V
INCHES  
MM  
MIN  
14.22  
9.65  
MAX  
15.88  
10.67  
NOTE  
DIM  
MIN  
MAX  
.625  
Base-emitter Voltage  
( IC=2A ; VCE=4V )  
Collector cut-off current  
(VCB=60V; IE=0)  
A
B
C
.560  
.380  
.140  
.420  
.190  
ICBO  
3.56  
4.82  
TIP110  
TIP111  
TIP112  
ICEO  
TIP110  
TIP111  
TIP112  
1
2
mA  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
(VCB=80V; IE =0)  
(VCB=100V; IE =0)  
Collector cut-off current  
(VCE=30V; VEB=0)  
(VCE=40V; VEB=0)  
(VCE=50V; VEB=0)  
G
H
J
.012  
0.30  
mA  
mA  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
Emitter cut-off current  
(VEB=5V; IC=0)  
DC current gain  
N
.190  
.210  
4.83  
5.33  
IEBO  
Hfe  
2.0  
Q
R
S
T
U
V
.100  
.080  
.045  
.230  
-----  
.135  
.115  
.055  
.270  
.050  
-----  
2.54  
2.04  
1.14  
5.84  
-----  
3.43  
2.92  
1.39  
6.86  
1.27  
-----  
1000  
500  
(IC=1A ; VCE=4V)  
(IC=2A ; VCE=4V)  
Output capacitance  
( IE=0 ; VCB=-10V,f=0.1MHz )  
100  
PF  
COB  
.045  
1.15  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 2  
Revision: 5  
2008/01/01  

TIP111-BP 替代型号

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