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TIP111 PDF预览

TIP111

更新时间: 2024-11-03 22:42:15
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6页 105K
描述
NPN SILICON POWER DARLINGTONS

TIP111 数据手册

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TIP110, TIP111, TIP112  
NPN SILICON POWER DARLINGTONS  
Copyright © 1997, Power Innovations Limited, UK  
DECEMBER 1971 - REVISED MARCH 1997  
Designed for Complementary Use with  
TIP115, TIP116 and TIP117  
TO-220 PACKAGE  
(TOP VIEW)  
50 W at 25°C Case Temperature  
4 A Continuous Collector Current  
1
2
3
B
C
E
Minimum h of 500 at 4 V, 2 A  
FE  
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
60  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
VCBO  
80  
V
100  
60  
VCEO  
80  
V
100  
Emitter-base voltage  
VEBO  
IC  
ICM  
IB  
5
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
4
6
A
50  
mA  
W
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)  
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)  
Unclamped inductive load energy (see Note 4)  
Ptot  
Ptot  
50  
2
W
2
½LIC  
25  
mJ  
°C  
°C  
°C  
Operating junction temperature range  
Tj  
Tstg  
TL  
-65 to +150  
-65 to +150  
260  
Storage temperature range  
Lead temperature 3.2 mm from case for 10 seconds  
NOTES: 1. This value applies for tp £ 0.3 ms, duty cycle £ 10%.  
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.  
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.  
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 W,  
VBE(off) = 0, RS = 0.1 W, VCC = 20 V.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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