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TIP111 PDF预览

TIP111

更新时间: 2024-11-04 12:23:43
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 103K
描述
SILICON DARLINGTON POWER TRANSISTORS

TIP111 数据手册

 浏览型号TIP111的Datasheet PDF文件第2页浏览型号TIP111的Datasheet PDF文件第3页 
NPN TIP110-111-112  
SILICON DARLINGTON POWER TRANSISTORS  
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220  
enveloppe.  
They are designed for general purpose amplifier and low-speed switching applications.  
PNP complements are TIP115-116-117  
.
Compliance to RoHS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
Ratings  
Value  
Unit  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
TIP110  
TIP111  
TIP112  
60  
80  
100  
60  
80  
100  
Collector-Base Voltage  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
5
2
A
ICM  
Collector Peak Current  
Base Current  
4
A
IB  
50  
50  
2
mA  
@ Tc < 25°  
@ Ta < 25°  
PT  
Power Dissipation  
Watts  
TJ  
Ts  
Junction Temperature  
150  
°C  
Storage Temperature range  
-65 to +150  
05/10/2012  
COMSET SEMICONDUCTORS  
1 |3  

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