Datasheet > TIP106-B

TIP106-B

更新时间： 2024-09-17 07:24:19

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	125K
描述
Transistor

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中文翻译

获取价格

数据手册

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TIP106-B 数据手册

M C C

TIP105

TIP106

TIP107

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

High DC Current Gain : h_FE=2500 (Typ) @ I_C=4.0Adc

Low Collector-Emitter Saturation Voltage

Monolithic Construction with Built-in Base-Emitter Shunt Resistors

TO-220 Compact package

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

PNP Plastic

Medium-Power

Silicon Transistors

•

Maximum Ratings

Symbol

V_CEO

Rating

Collector-Emitter Voltage

Rating

Unit

100

TO-220

TIP105

TIP106

TIP107

TIP105

TIP106

TIP107

V_CBO

Collector-Base Voltage

100

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current-continuous

Collector Current-peak

Base Current

5.0

8.0

1.0

Collector Dissipation @T_C=25^OC

0.64

-55 to +150

P_D

Derate above 25 ^OC

Junction Temperature

Storage Temperature

W/ ^OC

^OC

T_J,

T_STG

Electrical Characteristics @ 25 C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

PIN 1.

PIN 2.

PIN 3.

BASE

COLLECTOR

EMITTER

(I_C=30mAdc, I_B=0)

TIP105

TIP106

TIP107

100

---

Vdc

I_CEO

Collector Cut-off Current

(V_CE=30Vdc, I_B=0)

TIP105

TIP106

TIP107

---

uAdc

(V_CE=40Vdc, I_B=0)

(V_CE=50Vdc, I_B=0)

I_CBO

Collector Cut-off Current

(V_CB=60Vdc, I_E=0)

(V_CB=80Vdc, I_E=0)

(V_CB=100Vdc, I_E=0)

Emitter Cut-off Current

(V_BE=5.0Vdc, I_C=0)

ꢁꢂꢃꢉꢄꢊꢂꢇꢄꢊ

ꢀ ꢀ ꢀ ꢀ

TIP105

TIP106

TIP107

---

uAdc

mAdc

----

INCHES

ꢁꢂꢃ

ꢃꢂꢄ

.560

.380

.100

.230

.380

------

.500

.090

.020

.012

.139

.140

.045

.080

ꢃꢅꢆ

ꢃꢂꢄ

14.22

9.65

ꢃꢅꢆ

15.88

10.67

3.43

ꢄꢇꢈꢉ

.625

.420

.135

I_EBO

---

8.0

2.54

.270

.420

5.84

9.65

6.86

10.67

6.35

14.73

2.79

1.14

0.64

4.09

4.83

1.40

ON CHARACTERISTICS(1)

.250

.580

------

12.70

h_FE(1)

DC Current Gain

(I_C=3.0Adc, V_CE=4.0Vdc)

(I_C=8.0Adc, V_CE=4.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=3.0Adc, I_B=6.0mAdc)

(I_C=8.0Adc, I_B=80mAdc)

Base-Emitter On Voltage

(I_C=8.0Adc,V_CE=4.0Adc)

1000

200

20000

---

.110

2.29

.045

.025

0.51

0.30

V_CE(sat)

---

2.0

2.5

.161

3.53

Vdc

---

.190

.055

3.56

1.14

V_BE(ON)

hfe

.115

2.03

2.92

---

4.0

---

2.8

---

Small-Signal Current Gain

(I_C=3.0Adc,V_CE=4.0Vdc,f=1.0MHz)

Output Capacitance

C_ob

(V_CB=10V, I_E=0, f=0.1MHz)

300

(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%

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Revision: 2

2006/05/18

12 3 4

中文翻译

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与TIP106-B相关器件

型号	品牌	获取价格	描述	数据表
TIP106-BP	MCC	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP106C	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP106D1	MOTOROLA	获取价格	8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
TIP106G	ONSEMI	获取价格	Plastic Medium−Power Complementary Silicon Transistors
TIP106J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP106L	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP106N	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
TIP106PNP	CDIL	获取价格	PLASTIC POWER TRANSISTORS
TIP106S	MOTOROLA	获取价格	暂无描述
TIP106T	MOTOROLA	获取价格	8A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB

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