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TIP107 PDF预览

TIP107

更新时间: 2024-11-19 07:04:31
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 143K
描述
isc Silicon PNP Darlington Power Transistor

TIP107 数据手册

 浏览型号TIP107的Datasheet PDF文件第2页浏览型号TIP107的Datasheet PDF文件第3页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
TIP107  
DESCRIPTION  
·High DC Current Gain-  
: hFE = 1000(Min)@ IC= -3A  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = -100V(Min)  
·Low Collector-Emitter Saturation Voltage-  
: VCE(sat) = -2.0V(Max)@ IC= -3A  
= -2.5V(Max)@ IC= -8A  
·Complement to Type TIP102  
APPLICATIONS  
·Designed for general-purpose amplifier and low-speed  
switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-100  
-100  
-5  
UNIT  
V
V
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current- Continuous  
-8  
A
ICM  
-15  
A
IB  
-1  
A
Collector Power Dissipation  
@TC=25  
Collector Power Dissipation  
@Ta=25℃  
80  
PC  
W
2
Junction Temperature  
150  
-65~150  
Tj  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.56  
62.5  
UNIT  
/W  
/W  
Thermal Resistance,Junction to Case  
Thermal Resistance,Junction to Ambient  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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