Datasheet > TIC116M

TIC116M

更新时间： 2024-11-26 22:19:43

品牌	Logo	应用领域
POINN		栅极可控硅整流器局域网
页数	文件大小	规格书
6页	114K
描述
SILICON CONTROLLED RECTIFIERS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

TIC116M 技术参数

生命周期：	Transferred	包装说明：	TO-220, 3 PIN
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.63
Is Samacsys：	N	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

TIC116M 数据手册

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

8 A Continuous On-State Current

80 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 20 mA

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

UNIT

TIC116D

TIC116M

TIC116S

TIC116N

TIC116D

TIC116M

TIC116S

TIC116N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V_RRM

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width £ 300 ms)

Peak gate power dissipation (pulse width £ 300 ms)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

P_GM

P_G(AV)

T_C

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

下载PDF

与TIC116M相关器件

型号	品牌	获取价格	描述	数据表
TIC116N	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC116N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116S	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC116S-S	BOURNS	获取价格	Silicon Controlled Rectifier, 5000mA I(T), 700V V(DRM)
TIC12400	TI	获取价格	具有集成式 1:1 (SPST)、10 通道 ADC 和 SPI 的 24 输入传感器监控
TIC12400DCPR	TI	获取价格	具有集成式 1:1 (SPST)、10 通道 ADC 和 SPI 的 24 输入传感器监控
TIC12400-Q1	TI	获取价格	具有 SPI 和集成 ADC 的汽车类 35V 多开关检测接口 (MSDI)
TIC12400QDCPRQ1	TI	获取价格	具有 SPI 和集成 ADC 的汽车类 35V 多开关检测接口 (MSDI) \| DCP
TIC126	POINN	获取价格	SILICON CONTROLLED RECTIFIERS

与TIC116M相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

TIC116M

TIC116M 技术参数

TIC116M 数据手册

与TIC116M相关器件

与TIC116M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TIC116M

TIC116M 技术参数

TIC116M 数据手册

与TIC116M相关器件

与TIC116M相关文章

您还可以找

您在本页遇到什么问题？