TIC126M-S

更新时间： 2024-10-02 12:28:19

品牌	Logo	应用领域
伯恩斯 - BOURNS		栅极触发装置可控硅整流器
页数	文件大小	规格书
4页	147K
描述
TIC126 SERIES SILICON CONTROLLED RECTIFIERS

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中文翻译

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技术参数
数据手册
替代型号

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TIC126M-S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.06
Is Samacsys：	N	最大直流栅极触发电流：	20 mA
最大直流栅极触发电压：	1.5 V	最大维持电流：	40 mA
最大漏电流：	2 mA	通态非重复峰值电流：	100 A
最大通态电流：	7500 A	最高工作温度：	110 °C
最低工作温度：	-40 °C	断态重复峰值电压：	600 V
子类别：	Silicon Controlled Rectifiers	表面贴装：	NO
触发设备类型：	SCR	Base Number Matches：	1

TIC126M-S 数据手册

TIC126 SERIES

SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current

100 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 20 mA

This series is currently available, but

not recommended for new designs.

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

UNIT

TIC126D

TIC126M

TIC126S

TIC126N

TIC126D

TIC126M

TIC126S

TIC126N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V_RRM

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

7.5

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width ≤ 300 µs)

Peak gate power dissipation (pulse width ≤ 300 µs)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

100

P_GM

P_G(AV)

T_C

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

APRIL 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

12 3 4

中文翻译

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TIC126M-S 替代型号

型号	品牌	替代类型	描述	数据表
S6015LTP	LITTELFUSE	功能相似	Silicon Controlled Rectifier, 15A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB,
NTE5411	NTE	功能相似	Silicon Controlled Rectifier (SCR) 4 Amp, Sensitive Gate

与TIC126M-S相关器件

型号	品牌	获取价格	描述	数据表
TIC126N	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC126N	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126N	NJSEMI	获取价格	Thyristor SCR 800V 100A 3-Pin(3+Tab) TO-220
TIC126N-S	BOURNS	获取价格	Silicon Controlled Rectifier, 7500mA I(T), 800V V(DRM)
TIC126S	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC126S-S	BOURNS	获取价格	暂无描述
TIC201	POINN	获取价格	SILICON TRIACS
TIC201A	TI	获取价格	TRIAC, TRIAC,100V V(DRM),2.5A I(T)RMS,TO-220
TIC201B	TI	获取价格	TRIAC, TRIAC,200V V(DRM),2.5A I(T)RMS,TO-220

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