5秒后页面跳转
TIC126M PDF预览

TIC126M

更新时间: 2024-11-03 22:19:43
品牌 Logo 应用领域
POINN 可控硅整流器
页数 文件大小 规格书
6页 113K
描述
SILICON CONTROLLED RECTIFIERS

TIC126M 技术参数

生命周期:Transferred包装说明:TO-220, 3 PIN
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.65
Is Samacsys:NJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:SCR
Base Number Matches:1

TIC126M 数据手册

 浏览型号TIC126M的Datasheet PDF文件第2页浏览型号TIC126M的Datasheet PDF文件第3页浏览型号TIC126M的Datasheet PDF文件第4页浏览型号TIC126M的Datasheet PDF文件第5页浏览型号TIC126M的Datasheet PDF文件第6页 
TIC126 SERIES  
SILICON CONTROLLED RECTIFIERS  
Copyright © 2000, Power Innovations Limited, UK  
APRIL 1971 - REVISED JUNE 2000  
G
G
G
G
G
12 A Continuous On-State Current  
100 A Surge-Current  
TO-220 PACKAGE  
(TOP VIEW)  
Glass Passivated Wafer  
K
A
G
1
2
3
400 V to 800 V Off-State Voltage  
Max I of 20 mA  
GT  
Pin 2 is in electrical contact with the mounting base.  
MDC1ACA  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
400  
600  
700  
800  
400  
600  
700  
800  
12  
UNIT  
TIC126D  
TIC126M  
TIC126S  
TIC126N  
TIC126D  
TIC126M  
TIC126S  
TIC126N  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
VDRM  
V
VRRM  
V
Continuous on-state current at (or below) 70°C case temperature (see Note 1)  
IT(RMS)  
IT(AV)  
A
A
Average on-state current (180° conduction angle) at (or below) 70°C case temperature  
(see Note 2)  
7.5  
Surge on-state current at (or below) 25°C case temperature (see Note 3)  
Peak positive gate current (pulse width £ 300 ms)  
Peak gate power dissipation (pulse width £ 300 ms)  
Average gate power dissipation (see Note 4)  
Operating case temperature range  
ITM  
IGM  
100  
A
3
A
PGM  
PG(AV)  
TC  
5
1
W
W
°C  
°C  
°C  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
TL  
Lead temperature 1.6 mm from case for 10 seconds  
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.  
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate  
linearly to zero at 110°C.  
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
4. This value applies for a maximum averaging time of 20 ms.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

与TIC126M相关器件

型号 品牌 获取价格 描述 数据表
TIC126M-S BOURNS

获取价格

TIC126 SERIES SILICON CONTROLLED RECTIFIERS
TIC126N POINN

获取价格

SILICON CONTROLLED RECTIFIERS
TIC126N COMSET

获取价格

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126N NJSEMI

获取价格

Thyristor SCR 800V 100A 3-Pin(3+Tab) TO-220
TIC126N-S BOURNS

获取价格

Silicon Controlled Rectifier, 7500mA I(T), 800V V(DRM)
TIC126S COMSET

获取价格

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126S POINN

获取价格

SILICON CONTROLLED RECTIFIERS
TIC126S-S BOURNS

获取价格

暂无描述
TIC201 POINN

获取价格

SILICON TRIACS
TIC201A TI

获取价格

TRIAC, TRIAC,100V V(DRM),2.5A I(T)RMS,TO-220