TIC116S

更新时间： 2024-10-02 06:02:07

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描述
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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中文翻译

获取价格

数据手册

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TIC116S 数据手册

SEMICONDUCTORS

TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,

TIC116N, TIC116S

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

•

8 A Continuous On-State Current

80 A Surge-Current

Glass Passivated Wafer

100 V to 800 V Off-State Voltage

Max I_GTof 20 mA

Compliance to ROHS

ABSOLUTE MAXIMUM RATINGS

Value

Symbol

Ratings

Unit

Repetitive peak off-state voltage

(see Note1)

V_DRM

V_RRM

I_T(RMS)

100 200 300 400 500 600 700 800

Repetitive peak reverse voltage

Continuous on-state current at (or below)

70°C case temperature (see note2)

Average on-state current (180° conduction

angle) at(or below) 70°C case temperature

(see Note3)

100 200 300 400 500 600 700 800

I_T(AV)

Surge on-state current (see Note4)

Peak positive gate current (pulse width

≤300 µs)

I_TM

I_GM

Peak power dissipation (pulse width ≤300

µs)

Average gate power dissipation (see

Note5)

P_GM

P_G(AV)

Operating case temperature range

-40 to +110

-40 to +125

T_C

T_stg

°C

Storage temperature range

Lead temperature 1.6 mm from case for 10

seconds

230

T_L

°C

Notes:

1. These values apply when the gate-cathode resistance R_GK= 1kΩ

2. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to

zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with

resistive load. Above 70°C derate linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated

value of peak reverse voltage and on-state current. Surge may be repeated after the device has

returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

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