Datasheet > TIC116N

TIC116N

更新时间： 2024-10-01 22:19:43

品牌	Logo	应用领域
POINN		栅极可控硅整流器局域网
页数	文件大小	规格书
6页	114K
描述
SILICON CONTROLLED RECTIFIERS

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中文翻译

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技术参数
数据手册

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TIC116N 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.66
Is Samacsys：	N	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

TIC116N 数据手册

TIC116 SERIES

SILICON CONTROLLED RECTIFIERS

APRIL 1971 - REVISED JUNE 2000

8 A Continuous On-State Current

80 A Surge-Current

TO-220 PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max I of 20 mA

Pin 2 is in electrical contact with the mounting base.

MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

400

600

700

800

400

600

700

800

UNIT

TIC116D

TIC116M

TIC116S

TIC116N

TIC116D

TIC116M

TIC116S

TIC116N

Repetitive peak off-state voltage

Repetitive peak reverse voltage

V_DRM

V_RRM

Continuous on-state current at (or below) 70°C case temperature (see Note 1)

I_T(RMS)

I_T(AV)

Average on-state current (180° conduction angle) at (or below) 70°C case temperature

(see Note 2)

Surge on-state current at (or below) 25°C case temperature (see Note 3)

Peak positive gate current (pulse width £ 300 ms)

Peak gate power dissipation (pulse width £ 300 ms)

Average gate power dissipation (see Note 4)

Operating case temperature range

I_TM

I_GM

P_GM

P_G(AV)

T_C

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

T_L

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.

2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate

linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与TIC116N相关器件

型号	品牌	获取价格	描述	数据表
TIC116S	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC116S	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC116S-S	BOURNS	获取价格	Silicon Controlled Rectifier, 5000mA I(T), 700V V(DRM)
TIC12400	TI	获取价格	具有集成式 1:1 (SPST)、10 通道 ADC 和 SPI 的 24 输入传感器监控
TIC12400DCPR	TI	获取价格	具有集成式 1:1 (SPST)、10 通道 ADC 和 SPI 的 24 输入传感器监控
TIC12400-Q1	TI	获取价格	具有 SPI 和集成 ADC 的汽车类 35V 多开关检测接口 (MSDI)
TIC12400QDCPRQ1	TI	获取价格	具有 SPI 和集成 ADC 的汽车类 35V 多开关检测接口 (MSDI) \| DCP
TIC126	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TIC126A	COMSET	获取价格	P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
TIC126A	TI	获取价格	12A, 100V, SCR

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